The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
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The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys Alexey V. Dmitriev and Alexander L. Oruzheinikov MRS Internet Journal of Nitride Semiconductor Research / Volume 1 / January 1996 DOI: 10.1557/S1092578300002180, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300002180 How to cite this article: Alexey V. Dmitriev and Alexander L. Oruzheinikov (1996). The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys . MRS Internet Journal of Nitride Semiconductor Research, 1, pp e46 doi:10.1557/S1092578300002180 Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 1, Article 46
The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys Alexey V. Dmitriev, Alexander L. Oruzheinikov M.V.Lomonosov Moscow State University This article was received on June 3, 1996 and accepted on December 30, 1996.
Abstract The radiative recombination rates have been calculated for the first time in the wide band gap wurtzite semiconductors GaN, InN and AlN and their solid solutions Gax Al1-xN and Inx Al1-xN on the base of existing data on the energy band structure and optical absorption in these materials. We calculated the interband matrix elements for the direct optical transitions between the conductivity band and the valence one using the experimental photon energy dependence of the absorption coefficient near the band edge. In our calculations we assumed that the material parameters of the solid solutions (the interband matrix element, carrier effective masses and so on) could be obtained by a linear interpolation between their values in the alloy components. The temperature dependence of the energy gap was taken in the form proposed by Varshni. The calculations of the radiative recombination rates were performed in the wide range of temperature and alloy compositions.
1. Introduction Nowadays, the nitride semiconductors such as GaN, AlN and InN attract a considerable attention due to their outstanding physical, chemical and mechanical properties and also because of the recent progress in the technology that allowed to produce high quality nitride films with help of MOVPE and MBE (for a recent review, see Ref. [1]). The attractive properties of the nitrides include high heat conductivity, hardness, chemical stability and high luminescence intensity. These wide gap semiconductors are very promising materials for LEDs and semiconductor lasers in wide spectral interval from ultra-violet to green and even orange [2] [3] because their solid solutions may have the energy gap varying from 2eV in InN to 6.2eV in AlN. Important characteristics of materials used in luminescence devices are the rates of different electron—hole rec
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