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THE USE OF DISORDERED INTERLAYERS TO ENHANCE NUCLEATION OF SILICON NITRIDE DURING CHEMICAL VAPOR DEPOSITION Rachel E. Boekenhauer, Frederick S. Lauten* and Brian W. Sheldon Division of Engineering, Brown University, Providence, RI 02912 ABSTRACT Thin, disordered interlayers were used to enhance the nucleation of Si 3N 4. Continuous crystalline films were formed at relatively low temperatures (

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