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E9.16.1

Theoretical Investigation of Formation of (n-n+)-Junction in Ion-Implanted Crystalline Matrix. R. Peleshchak, O. Kuzyk 8tate Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine H. Khlyap University of Technology, E.-Schroedinger str. 56, D-67663 Kaiserslautern, Germany, and 8tate Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine ABSTRACT The paper reports results of theoretical calculations of the redistribution of electrons and electrostatic potential in the implanted crystalline matrix (100)-GaAs+Si(Ar) due to electrondeformation effects. The model requires a self-consistent solution of the set of following equations: 1)the time-independent Schroedinger equation; 2) the equation of mechanical equilibrium: 3) the Poisson equation for determining electrostatic potential distribution; 4) the equation for calculation of the electron concentration, and 5) the equation for the chemical potential calculation in the implanted system. The most important result is: it is shown that in the elastic region of the implanted matrix n-n+-junction is formed. Current-voltage characteristics of the junction are numerically simulated. INTRODUCTION The structure and properties of solids can be affected by radiation. There is considerable current interest in the modifications of surface layers using ion, electron and laser beams. The most successful and widespread surface modification technique in semiconductor technology is the ion implantation. Electrical dopants are introduced directly into a semiconductor surface layer by bombarding it with energetic ions. Ion implantation allows excellent control over the number and distribution of atoms that can be injected, and it is undoubtedly this feature that has made the process an indispensable part of semiconductor technology [1]. As it is known, the ion implantation involves the irradiation of solids by beams of energetic ions [2-3]. Nevertheless, the effects of the surface deformation and so-called electric consequences (such as the changes in the carriers’ distribution, electrostatic potential etc.) of the interaction between the ion beam and the implanted surface should be taken into account (Fig.1. [1]).

Fig.1. Schematic image of the interaction between the ion beam and the implanted surface. Both n-type and p-type implantations have been applied to the fabrication of such GaAs devices as FETs, junction FETs, bipolar transistors, solar cells etc. Since the electron mobility in GaAs is much higher than the hole mobility, high-speed majority carrier devices require n-type active layers. For this reason, n-type implantation is of considerable interest for device applications. For manufacturing materials with in-advanced defined properties [3] it is very important to predict the distribution profile of implanted ions in the crystalline matrix as well as to obtain

E9.16.2

information about the distribution of charge carriers and electrostatic potential in the implanted lattice. This information is seemed to be of particular interest for description