Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
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Internet Journal of Nitride Semiconductor Research:
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Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm and R. A. Talalaev MRS Internet Journal of Nitride Semiconductor Research / Volume 1 / January 1996 DOI: 10.1557/S1092578300002039, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300002039 How to cite this article: M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm and R. A. Talalaev (1996). Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy . MRS Internet Journal of Nitride Semiconductor Research, 1, pp e31 doi:10.1557/S1092578300002039 Request Permissions : Click here
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Nitride S emiconductor Research
Volume 1, Article 31
Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy M. V. Averyanova Russian Research Center "Applied Chemistry" S. Yu. Karpov Advanced Technology Center Yu. N. Makarov Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg I. N. Przhevalskii Russian Research Center "Applied Chemistry" M. S. Ramm, R. A. Talalaev Ioffe Physical-Technical Institute This article was received on May 27, 1996 and accepted on October 31, 1996.
Abstract A theoretical model which accounts for a physisorption precursor of molecular nitrogen is proposed for the analysis of group III-nitride growth by molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to be an essential factor influencing the MBE growth process of group III-nitrides. The high thermal stability of nitrides is explained to be related to the desorption kinetics resulting in a low value of the evaporation coefficient. The values of the evaporation coefficients as functions of temperature are extracted from the experimental Langmuir evaporation data of GaN and AlN. Using the revised thermodynamic properties of the group III-nitrides, and the obtained values of the evaporation coefficient, the process parameter dependent growth rate and transition to extra liquid phase formation during the GaN MBE are calculated. The theoretical results are compared to the available experimental data.
1. Introduction Group III-nitrides are of great importance for green, blue and ultraviolet light emitting and laser diodes, as well as high power and high temperature electronic devices [1]. Progress in this field is closely related to success in growing epitaxial layers and heterostructures. For this purpose both metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are employed. Optimization of the growth process using these techniques is a key issue of many recent studies. Num
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