Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K
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esearch Letters
Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K D. Prikhodko, Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia; Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia S. Tarelkin, Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia; Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia; National University of Science and Technology MISiS, 119049, 2 Leninskiy Prospect, Moscow, Russia V. Bormashov, and A. Golovanov, Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia; Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia M. Kuznetsov, and D. Teteruk, Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia A. Volkov, and S. Buga, Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia; Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia Address all correspondence to V. Bormashov at [email protected] (Received 15 December 2015; accepted 11 March 2016)
Abstract Thermal conductivity of single-crystal boron-doped diamond (BDD) was studied in comparison with high-quality pure IIa-type diamond in the temperature range from 20 to 400 K. Boron content in BDD was about 1019 cm−3 that is a typical value of p+ substrates used for power device applications. The thermal conductivity of BDD is about 10 times less than that of IIa diamond near 100 K, but above room temperature the difference is 300 K, umklapp processes have dominating influence on the thermal conductivity of BDD similarly to the case of IIa diamond. However, the maximum of thermal conductivity of BDD is limited by the scattering on dislocations instead of isotopic impurities. We should emphasize that the thermal conductivity of doped diamond is almost not affected by single substututional boron atoms in a whole temperature range. However, an increase of doping level results in extended structural defects appearance in BDD due to lattice strain relaxation. Below 100 K a ballistic transport of phonons is assumed. This means that parameter d in (5) equals to phonon-free path length. A good fit was found at d ≈ 10 µm. We may assume an occurrence of extended defects in heavily BDD similar to crystal boundaries that limit the phonon-free path.
Conclusions We performed comparative studies of thermal conductivity of single-crystal high-quality pure IIa-type and BDDs in the temperature range from 20 to 400 K. We found that above room temperature phonon–phonon scattering have dominating influence on the thermal conductivity for both the crystals. Thus, the difference
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