Thermo-optic Aided Tunability of Sr 0.6 Ba 0.4 Nb 2 O 6 Thin Film-based Electro-optic Modulator Using Waveguide Coupled
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Thermo-optic Aided Tunability of Sr0.6Ba0.4Nb2O6 Thin Film-based Electro-optic Modulator Using Waveguide Coupled SPR Modes Surbhi Gupta 1 & Ayushi Paliwal 1 & Vinay Gupta 1 & Monika Tomar 2 Received: 11 July 2019 / Accepted: 3 November 2019 # Springer Science+Business Media, LLC, part of Springer Nature 2019
Abstract Present article demonstrates the effective tuning of thermo-optic (TO) properties with the Electro-Optic (EO) modulation characteristics of SBN60 thin films utilizing Waveguide coupled surface plasmon resonance (WCSPR) technique. Electrooptic (EO) coefficient (r) was in turn tuned from a value of 594 pm/V to 621 pm/V with increasing ambient temperature from 296 to 373 K. Tunable percent modulation index varying from 24 to 55% was obtained with increasing ambient temperature at a fixed applied electric field. The obtained results clearly illustrate an efficient thermally tunable EO modulator based on SBN thin ∂n film utilizing a simplistic approach with ∂T ¼ 88:3 10−4 K −1 . E¼0 Keywords Opto-electronic . Electro-optic . Thermo-optic . Modulation . Waveguide
Introduction A substantial interest has been developed to monitor the temperature-induced deviations in the values of refractive index as compared with those at room temperature for the fabrication of optoelectronic devices [1, 2]. The modification in the value of refractive index of the functional material due to temperature fluctuations is owing to the thermo-optic effect [1, 3]. While designing the devices, this effect is of major concern as it may lead to malfunctioning of various passive and active devices where wavelength scales with the refractive index [2]. Further, it can be efficiently exploited for the design of thermally tunable active devices for various applications including modulators, switches, etc. [1, 4, 5]. Much interest in the research community has been developed towards the thermo-optic (TO) devices as they possess good reliability and a high modulation efficiency [6]. TO coefficient in any material is defined as the change in the optical refractive index with the corresponding fluctuations in temperature (dn/dT). For the design of various optical switches, modulators and cross connectors, materials possessing high TO coefficient are
* Monika Tomar [email protected] 1
Department of Physics & Astrophysics, University of Delhi, Delhi, India
2
Department of Physics, Miranda House, University of Delhi, Delhi, India
exploited [7]. The switching of optical paths in these devices is carried out due to change in TO coefficient by controlling the effective temperature [1, 8, 9]. For the fabrication of TO modulator and switches, silica and optical polymers are the majorly exploited material in literature [1, 10]. However, these materials demand a high switching power, and exhibit a long response time and poor thermal stability due to low TO coefficient which limits their potential applications [6]. Alternatively, ferroelectric relaxors have shown a great potential in TO device applications with good thermal stability [6,
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