Third BACG Photochemical Processing Workshop Held in Edinburgh
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Third BACG Photochemical Processing Workshop Held in Edinburgh The Third Photochemical Processing Workshop was held by the British Association for Crystal Growth (BACG) in association with the Institute of Physics, the Royal Society of Chernistry, and the Institute of Electrical Engineers at Heriot-Watt University, Edinburgh, Scotland, March 25,1988. Significant developments in the held of photochemical processing were aired at this year's Workshop. Although there was a strong bias towards the Ught-assisted growth, etching and processing of semiconductors, the proceedings included valuable contributions on polymer ablation, metal and dielecrric deposition, and the use of lasers to produce superconducting films. One of the largest topics for discussion was the photoetching of semiconducting materials. Pulsed excimer sources have been used to etch GaAs directly by Gillian Davis (Rutherford Appleton Laboratory). This method can be used to produce either smooth surfaces or, by using interference, gratings with a periodicity of 1.5(im. The process works well in a nitrogen atmosphere but is faster in the presence of oxygen. Don Rodway of the Royal Signals and Radar Establishment (RSRE) has used similar but less aggressive conditions to remove carbon contamination from GaAs Substrates prior to MBE growth. Qearly the comparibiliry of photochemical etching and cleaning methods with, for example, MOVPE growth makes this technology an attracrive choice for in situ processing. The use of iodine-substituted methanes in etching ITI-V semiconductors has srimulated interest at both British Telecom Research Laboratory (BTRL) and University of Manchester Institute of Science and Technology (UMIST). Ken Durose (BTRL) has demonstrated the use of CH3I to produce directly written etched lines in InP. Coatings of native oxide were used to change the steepness of the walls and definition of the grooves as required. Peter Goulding presented work on a similar System, CHJj on GaAs which was carried out in Martyn Pemble's laboratory at UMIST. Apparatus which facilitates the transfer of Substrates from a processing environment directly into a UHV analytical Chamber enabled details of the adsorption of the reactive etching species to be invesrigated. Recent work on laser photoablation of spin-on glass and the novel polyethylcyanoacrylate photo-resist was discussed by Hogan et al. (Trinity College Dublin, and Lochte (Ireland). Affrossman et al. (Strathclyde University) reported new observations concerning argon-laserinduced etching of Silicon. MRS BULLETIN/JUNE 1988
Laser-induced deposition and growth also attracted a sizeable number of papers. Haq, Dobson, and Irvine (Birmingham University and RSRE) presented recent results on the nucleation of cadmium layers on semiconductors, while a paper by Daniel änd May of GEC (General Electric Company, U.K.) discussed ArF laser deposition of large-area high quality tungsten films. Silicon oxide deposition by hard UV radiation from a deuterium lamp was reported by Bhatnagar and Milne (Cambridge Universit
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