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TUNABILITY OF INTRINSIC STRESS IN SiOx DIELECTRIC FILMS FORMED BY MOLECULAR BEAM DEPOSITION Naresh Chand, R. R. Kola, J. W. Osenbach* and W. T. Tsang AT&T Bell Laboratories, Murray Hill, NJ 07974 *AT&T Bell Laboratories, Breinigsville, PA 18031. ABSTRACT Silicon monoxide (SiO) formed by molecular beam deposition (MBD) has many attractive optical, electrical, mechanical, and chemical properties which make it a suitable dielectric for many semiconductor device applications. It can be thermally evaporated at a much lower temperature than Si, Si0 2 or Si 3 N4 and it condenses on cooler surfaces in uniform and adherent stoichiometric SiO (x = 1) films when evaporated in high vacuum. At low deposition rates and at high pressures of oxygen, SiO, (1 _

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