Ultrasonic effect on multicomponent nanoheterostructures
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ICAL PROPERTIES OF CRYSTALS
Ultrasonic Effect on Multicomponent Nanoheterostructures E. K. Naimi and O. I. Rabinovich Moscow State Institute of Steel and Alloys, Moscow, 119049 Russia email: [email protected]; [email protected] Received September 3, 2010
Abstract—The ultrasonic effect on the characteristics of GaP and AlGaInN multicomponent nanohetero structures has been studied. It is found that the ultrasonic irradiation at frequencies of ~105 Hz for several hours leads to a significant degradation of the characteristics of multicomponent nanoheterostructures and shifts the luminescence spectral peak of LEDs based on these structures. The results obtained are qualitatively explained. DOI: 10.1134/S1063774511030199
INTRODUCTION Currently, semiconductors and various devices based on them are widely used in industry and elec tronics. In this context, an urgent problem is to develop highly efficient multicomponent nanohetero structures (MCNHs) with quantum dots and wells. Widegap АIIIВV and AIVBVI semiconductors (for example, AlGaInN, GaSb, and SiC), which are stable to radiation, temperature, chemical, and mechanical effects, are most appropriate for power, optoelec tronic, and microwave devices (power diodes and transistors; detectors; and IR, visible, and UV light emitting diodes (LEDs)). These materials have high Debye temperatures and, therefore, are stable to external effects. Quantumsized MCNHs based on the abovemen tioned compounds are of great interest for opto and functional electronics. In particular, nitridebased MCNHs are already in wide used in highly efficient detecting and emitting IR and visiblelight diodes because of their unique properties [1–5]. One of the most important advantages of АIIIВV and АIIВVI com pounds (in particular, GaN, InN, AlN, GaSb, GaP, and their solid solutions InхGa1 – хN and AlуGa1 – уN) is the wide range of variation in their band gap (Eg): from 1.95 to 6.3 eV, depending on the solid solution composition. Wellproven methods for growing MCNHs are molecularbeam epitaxy and metalor ganic chemicalvapor deposition. Many problems in the fabrication of quantumsized structures with spec ified properties are yet to be solved. This is especially true for the structures based on intermediate phases, which are formed in the systems characterized by high vapor tension and incongruent evaporation. It is of great practical importance to search for new approaches to solve the problems of intentionally forming quantumsized structures which would take into account the specific features of phase equilibria in
systems with a volatile component. This problem can effectively be solved by growing nanoscale islands using incongruent evaporation. One of the primary problems in the development of LEDs and power diodes of a new generation is to reduce the degradation rate of MCNHs operating for a long time under different conditions. Many studies were devoted to the effect of various factors (mainly, current and temperature) on the degradation of the characteristics of MCNHs and MCNHb
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