Use of radiation effects for a controlled change in the chemical composition and properties of materials by intentional
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Use of Radiation Effects for a Controlled Change in the Chemical Composition and Properties of Materials by Intentional Addition or Substitution of Atoms of a Certain Kind B. A. Gurovich, K. E. Prikhod’ko*, E. A. Kuleshova, K. I. Maslakov, and D. A. Komarov National Research Center Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182 Russia *email: [email protected] Received December 17, 2012
Abstract—This study is a continuation of works [1–12] dealing with the field developed by the authors, namely, to widen the possibilities of radiation methods for a controlled change in the atomic composition and properties of thinfilm materials. The effects under study serve as the basis for the following two methods: selective atom binding and selective atom substitution. Such changes in the atomic composition are induced by irradiation by mixed beams consisting of protons and other ions, the energy of which is sufficient for target atom displacements. The obtained experimental data demonstrate that the changes in the chemical compo sition of thinfilm materials during irradiation by an ion beam of a complex composition take place according to mechanisms that differ radically from the wellknown mechanisms controlling the corresponding chemi cal reactions in these materials. These radical changes are shown to be mainly caused by the accelerated ion– induced atomic displacements in an irradiated material during irradiation; that is, they have a purely radia tion nature. The possibilities of the new methods for creating composite structures consisting of regions with a locally changed chemical composition and properties are demonstrated for a wide class of materials. DOI: 10.1134/S1063776113050191
1. INTRODUCTION The development of new technological approaches that can create nanoelements for nanoelectronics, photonics, biotechnologies, etc., in a controlled man ner has received much attention [1–11]. Over a period of years, we have been developing methods for a con trolled change in the atomic composition and proper ties of substances using irradiation by accelerated par ticles [1–11]. These methods can be used to change the atomic composition of thinfilm materials in a controlled and selective manner. The first method consists in selective removal of atoms and can change the atomic composition of a material due to controlled removal of atoms of a certain kind from two or poly atomic substances [12, 13]. We have recently showed that our methods can also be used to combine or sub stitute atoms of a certain kind in various materials in a controlled and selective manner. As a result, we sub stantially widened the potential abilities of a local change in the composition, structure, and properties of materials to create functional elements for various purposes. The developed methods of a selective change in the atomic composition are characterized by the following substantial advantages: the possibility of creating elements of the required shape and size (with a minimum size of 10–15 nm), a high effi
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