Using graphene to suppress the selenization of Pt for controllable fabrication of monolayer PtSe 2
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Using graphene to suppress the selenization of Pt for controllable fabrication of monolayer PtSe2 Zhong-Liu Liu1,§, Zhi-Li Zhu1,§, Xu Wu2,§, Jin-An Shi1, Wu Zhou1, Li-Wei Liu2, Ye-Liang Wang2,1,3 (), and Hong-Jun Gao1,3 () 1
Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China 3 CAS Center for Excellence in Topological Quantum Computation, Beijing 100049, China § Zhong-Liu Liu, Zhi-Li Zhu, and Xu Wu contributed equally to this work. 2
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020 Received: 16 June 2020 / Revised: 10 July 2020 / Accepted: 16 July 2020
ABSTRACT Platinum diselenide (PtSe2) is a promising transition metal dichalcogenide (TMDC) material with unique properties. It is necessary to find a controllable fabrication method to bridge PtSe2 with other two-dimensional (2D) materials for practical applications, which has rarely been reported so far. Here, we report that the selenization of Pt(111) can be suppressed to form a Se intercalated layer, instead of a PtSe2 monolayer, by inducing confined conditions with a precoating of graphene. Experiments with graphene-island samples demonstrate that the monolayer PtSe2 can be controllably fabricated only on the bare Pt surface, while the Se intercalated layer is formed underneath graphene, as verified by atomic-resolution observations with scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM). In addition, the orientation of the graphene island shows a negligible influence on the Se intercalated layer induced by the graphene coating. By extending the application of 2D confined reactions, this work provides a new method to control the fabrication and pattern 2D materials during the fabrication process.
KEYWORDS PtSe2, graphene, confined reaction, selenization, intercalation
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Introduction
With their unique structural and electronic properties [1–4], two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been considered promising candidates for low-dimensional electronic devices [5–9]. As a representative member of 2D group-10 TMDCs, the semiconducting monolayer (ML) platinum diselenide (PtSe2) has been reported to have excellent properties, such as high charge-carrier mobility [10] and intervalley scattering [11]. Such fundamental properties of ML PtSe2 offer major potential applications in electronics [12], spintronics [13], catalysts [14] and sensors [15]. While monolayer PtSe2 has been successfully fabricated by direct selenization of a Pt(111) substrate [16], it is crucial to pattern [17–19] ML PtSe2 or bridge it with other 2D materials [20–23] to extend the applications. To pattern ML PtSe2 into delicate nanostructures, it is necessary to find an effective bottom-up way to control the PtSe2 morphology, because top-down etching may cause
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