Van Der Waals Force Mediated, Rotationally Aligned Dry-Transfer-Stacking of Two-Dimensional Tungsten Diselenide
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Van Der Waals Force Mediated, Rotationally Aligned Dry-Transfer-Stacking of Two-Dimensional Tungsten Diselenide Debottam Daw and Riya Sebait Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
Chandan Biswas∗ Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 16419, Korea. (Received 6 December 2019; revised 5 February 2020; accepted 19 February 2020) Rotationally aligned, two-dimensional (2D), transition-metal dichalcogenides (TMDs) exhibit unique electronic, optical, and optoelectronic properties compared to random stacking. Rotationally aligned graphene stacking was demonstrated previously for numerous exotic phenomena, such as superconductivity, resonant tunneling, and moir´e pattern. However, rotationally aligned drytransfer techniques of TMDs, have yet to be demonstrated. Here, we show a simple method of selective cutting of a few-layer tungsten diselenide (WSe2 ) flake and rotationally aligning it by using dry-transfer stacking. The dry transfer techniques used for this study were adapted to maintain low sample contamination, a high-quality interface, a low number of defects. A combination of viscoelastic and thermoelastic materials was used for the TMD pickup and release to facilitate the rotationally aligned stacking. Aligned WSe2 stacks were characterized by Raman and photoluminescence spectroscopy to evaluate the integrity of the fabricated stack. This study highlights the possibility of using a rotationally aligned, artificial stacking method for exfoliated TMD materials for future electronic and optoelectronic applications. Keywords: Rotationally aligned stacking, 2D nanomaterial, Transition-metal dichalcogenides, Dry transfer, Photoluminescence, Raman spectroscopy DOI: 10.3938/jkps.77.884
I. INTRODUCTION Recent developments of transition-metal dichalcogenides (TMDs) highlight numerous unique electronic, optical, and optoelectronic properties due to strong carrier interactions in two-dimensional (2D) space [1–7]. Two-dimensional (2D) graphene exhibits several attractive properties such as superconductivity, resonant tunneling, moir´e excitons, and exciton condensation, depending on the twisted stacking angle between individual graphene layers [8–11]. Such exotic phenomena can be realized in angle-dependent TMD stacking while maintaining high interface quality, a low number of crystal defects, and a minimum amount of transfer-induced contaminations. Recent optoelectronic studies highlight strong interlayer coupling between rotationally aligned TMD monolayers grown by chemical vapor deposition (CVD) [12]. On the other hand, CVD-grown TMDs have a high number of crystal defects and a large amount of precursor contamination, which can result in severe ∗ E-mail:
complications for sensitive device fabrication and observations of the above-mention phenomena. Mechanically exfoliated flakes from high-quality chemical-vaportransport (CVT) gr
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