Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO 2
- PDF / 1,637,931 Bytes
- 6 Pages / 417.6 x 639 pts Page_size
- 51 Downloads / 195 Views
I Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 2 Multiplex Inc., South Plainfield, NJ 07080 3 Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
We have studied the thermal stability and etching characteristics of E-beam deposited SiO and Si0 2 . Dry etch rates were studied using SF 6 and NF 3 discharges in a Plasma Therm inductively coupled plasma system. Wet etch rates were assessed with buffered HF and HF/H 20 solutions. SiO 2 etched faster than SiO under all etch conditions. Dry etch rate of SiO 2 was comparable with PECVD SiO 2. Auger analysis indicated that SiO 2 maintained excellent thermal stability after annealing to 700'C. The Si/O ratio of SiO in the film increased when annealed to 700'C. Ellipsometry also revealed greater refractive index variance across the sample for SiO, as compared to SiO 2. However, thickness variation of both films was < 2% across the wafer. Ellipsometry data also showed great thermal stability of SiO and SiO 2 . There was
Data Loading...