YBCO-based non-volatile ReRAM tested in Low Earth Orbit
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YBCO‑based non‑volatile ReRAM tested in Low Earth Orbit C. Acha1,2 · M. Barella3,4,7 · G. A. Sanca3 · F. Gomez Marlasca5 · H. Huhtinen6 · P. Paturi6 · P. Levy3,4,5 · F. Golmar3,4 Received: 26 June 2020 / Accepted: 5 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical test started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling, and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal–YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.
1 Introduction
* C. Acha [email protected] 1
Laboratorio de Bajas Temperaturas, Departamento de Física, FCEyN, Universidad de Buenos Aires, Pabellón I, Ciudad Universitaria, C1428EHA CABA, Argentina
2
IFIBA, UBA-CONICET, Pabellón I, Ciudad Universitaria, C1428EHA CABA, Argentina
3
Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín, Martín de Irigoyen 3100, B1650JKA San Martín, Bs. As., Argentina
4
Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2290, C1425FQB CABA, Argentina
5
Comisión Nacional de Energía Atómica (CNEA), Av. Del Libertador 8250, C1429BNP CABA, Argentina
6
Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI‑20014 Turku, Finland
7
Present Address: Centro de Investigaciones en Bionanociencias (CIBION), Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2390, C1425FQD CABA, Argentina
Many efforts have been made in recent years to deepen the study of the properties of memory devices based on the resistance switching effect (called ReRAM or Memristors), in order to analyze their possible applications as memory devices as well as in logi
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