1995 MRS Fall Meeting Assembles in Boston
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Rep. Roberts. Walker, chair of the Committee on Science in the U.S. House of Representatives, gives the plenary presentation on "Why U.S. Policies Affecting Science are Changing."
being considered for flat-panel displays, pressure and gas sensors, switches, amplifiers, and radiation detectors. Diamond containing boron becomes a semiconductor and exhibits piezoresistance (change of electrical resistance with strain), so it can be used as a strain gauge on rugged electronic microsensors for pressure and acceleration sensing, even at high temperatures. Diamonds can also be used as chemical sensors of hydrogen, oxygen, and other materials. In Symposium EE, Optoelectronic Materials—Ordering, Composition Modulation, and Self-Assembled Structures, one achievement reported was the growth of quantum wire lasers by strain-induced lateral-layer ordering using single-step molecular-beam epitaxy. The lasers showed an orientation-dependent threshold current density and lasing spectra and an unprecedented lasing wavelength stability of less than 0.9 A/°C. The growth mechanism allows wires to be formed without pre-growth substrate patterning or post-growth processing. Two laser wavelengths were reported, 1.7 um and 0.7 um, both of which are important to the communications industry. Organic materials are emerging as
promising candidates for future electronic, optical, and magnetic devices, as described in Symposium W. Conducting polymers, which offer the benefit of easy processing, low cost, and mechanical flexibility, have been fabricated into LEDs, batteries, and other devices, and have gained reasonable performance characteristics when combined with other polymers. However, to achieve broader success and to take full advantage of the assets of this technology, packaging methods are needed that keep deleterious oxygen and water out, and allow the conducting polymers to flex. Poled guest-host chromophore-polymer designs with various combinations of functionalization, cross linking, and other structures were discussed for second order nonlinear optics. In Symposium A, the results of a Department of Energy panel study on energetic ion beams in semiconductor processing were reviewed. This study provided guidelines for using ion implantation in the competitive world of microelectronics in the next 10 years. Newpaths in the implantation arena include the production of nanocrystals and quantum dots in insulators for nonlinear optical properties and photoluminescence, and use of a plasma source as a potentially more versatile technique than traditional implantation since it can treat large, irregularly shaped surfaces. New diagnostic equipment and processing techniques extend the horizons of materials research and represent an expanding sector of the materials community. In situ electron and scanning tunneling microscopy studies (Symposium J) have made possible the observation of dynamic reactions, including gas-solid dynamics, chemical etching, deposition processes, homoepitaxy, and electromigration. Optical techniques in particular hav
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