3D Structure Fabrication by FIB Milling and Deposition
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0983-LL08-08
3D Structure Fabrication by FIB Milling and Deposition Toshiaki Fujii, Koji Iwasaki, Masanao Munekane, Yo Yamamoto, Toshitada Takeuchi, Masakatsu Hasuda, Yutaka Ikku, Hiromi Tashiro, Tatsuya Asahata, Masahiro Kiyohara, and Takashi Kaito SII NanoTechnology Inc., Oyama-cho, Sunto-gun, Shizuoka, 410-1393, Japan
ABSTRACT Focused Ion Beam (FIB) system is equipment used to make a wide variety of micro and Nano structures. Structures can be created using various materials by irradiating focused gallium ion beam on to the surface of specimens and by sputtering, etching and ion beam induced deposition. In order to realize greater diversity for nano construction by using the FIB system, we have developed technologies incorporating: - Built-in pattern signal generator - Multiple Gas Unit for gas assisted etching and beam induced deposition - A precision wheel for the stage. This latest FIB system has a narrow Ion beam with a diameter of better than 4nm. Beam current is controlled from 0.15pA to 20nA. These performances contribute significantly to the study 3D structures fabrication and modification. INTRODUCTION The FIB system is used to microscopically observe and process the surface of specimen by irradiating gallium ion beam on to the specimen. Since 1980s, it has been used in photo-mask repair [1], modification of the wiring of integrated circuits [2], processing and observation of cross sections of integrated circuits [3], and has contributed greatly to the development of semiconductor integrated circuits. The first FIB product had an ion beam of approx. 50 nm in diameter. Improvements have been made over the years and the latest product has an ion beam of 4 nm or better in diameters at 30kV acceleration voltage. Using the latest FIB system, you can now create an extremely narrow gap of nanometer scale [4]. Furthermore, by using the FIB deposition function, the creation of 3-dimensional shapes is also tested [5]. These processes can be performed using electronic data (CAD or other) created by a computer without requiring photo-masks. Since many types of components of various microscopic shapes can be produced in a short time, the latest FIB system will be a powerful tool for the development of nanotechnology industry. FIB System Configuration Main specifications of the SMI3050 FIB system offered by SII NanoTechnology Inc. and used in this experiment are listed in Table 1.
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Table 1. SMI3050 Main Specifications
Ion beam acceleration voltage Minimum ion beam diameter Beam Irradiation Position Stability Beam current range Maximum sample size
Specification Values 1 ~ 30kV 4nm at 30kV 0.1µm/10min 0.15pA to 45nA Diameter 50mm
Figure 1. SMI3050 is a single beam FIB system made by SII NanoTechnology Inc. Gallium ions, which are emitted from an ion source by high electric
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