4H-SiC P + N UV Photodiodes: Influence of Temperature and Irradiation
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4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation B. Bérenguier1, a L. Ottaviani1,b , S. Biondo1, O. Palais1, M. Lazar2, F. Milesi3, F. Torregrosa4, E. Kalinina5, A. Lebedev5, W. Vervisch1, A. Lyoussi6 1
IM2NP (UMR 7334) – Aix-Marseille Université, Case 231, 13397 Marseille Cedex 20, France
2
AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
3
CEA LETI/MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
4
Ion Beam Services, Rue Gaston Imbert Prolongée, 13790 Peynier, France
5
Laboratory of Physics of Semiconductors Devices, IOFFE Institute, 194021 St Petersburg, Russia 6 a
CEA/DEN/CAD/DER/SPEx, 13108 St Paul les Durance Cedex
[email protected], [email protected],
ABSTRACT
4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.
INTRODUCTION Photodetectors allowing to measure low level ultraviolet (UV) radiation in harsh environment became during the last decade a major need in several industries, such like spacecommunications and nuclear systems monitoring. The conventional silicon devices are limited in terms of radiation resistance and ability to work at high temperature. Silicon carbide (SiC), with its low residual doping for epitaxial layers, high thermal conductivity and very good radiation hardness appears as a high potential replacement material. Thanks to the progress of SiC production techniques, it is then possible to use SiC for fabrication of devices able to operate under extreme conditions. Photodetectors based on SiC allow good wavelength selectivity in the UV range, without any optical filters [1][2]. The 4H polytype, with its superior band gap (3.23
eV), is the predominant polytype. Different devices have been fabricated, such as PN and PIN photodiodes, Schottky junctions, metal-semiconductor-metal components, β-Ga2O3/SiC heterojunctions [3][4][5][1] [5][6]. Such devices still have to prove their predicted ability to work under severe conditions of u
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