A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MB
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A comparative study of graphite and silicon as suitable substrates for the self‑catalysed growth of InAs nanowires by MBE Ezekiel A. Anyebe1,4 · Manoj Kesaria2 · A. M. Sanchez3 · Qiandong Zhuang1 Received: 22 July 2019 / Accepted: 6 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In order to fully exploit the enormous potential of functional monolithic nanowire/graphene hybrid structures in high-performance flexible devices, a better understanding of the influence of the graphitic substrate (GS) on NWs growth is crucial. InAs nanowires (NWs) were simultaneously grown on Si and GS with identical growth temperature, In-flux and V/III flux ratio via an In-catalysed growth technique. It is demonstrated that the GS is a more favourable platform for the growth of dense InAs NWs under highly In-rich conditions (low V/III flux ratio), whereas silicon is a more suitable substrate under a highly As-rich condition (high V/III flux ratio). It is shown that the GS enables NWs growth at high In-flux which has enormous potential for the fabrication of cost-effective nanodevices. Transmission electron microscopy analysis of the NW/ GS interface confirms the NWs are well aligned on the graphitic substrate. This study opens new possibilities for the choice of suitable substrate for the optimal growth of NWs under various conditions. Keywords Self-catalysed · InAs · Nanowires · Graphite · Density
1 Introduction Over the last few years the advent [1, 2] of graphene, the two-dimensional (2D) single-layer carbon material has sparked enormous research interest owing to its extraordinary electronic and optical properties including ultrahigh carrier mobility [3, 4], exceptionally high thermal conductivity, flexibility and high optical transparency [5, 6] which offers huge promise for applications in transparent and stretchable electronics. Its relative abundance and scalability further provide greater opportunities for large-scale fabrication [7–9]. Its high electron mobility, high elastic modulus and versatility have made it ideal for use as a substrate [10–12]. * Ezekiel A. Anyebe [email protected] 1
Physics Department, Lancaster University, Lancaster LA1 4YB, UK
2
School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
3
Department of Physics, Warwick University, Coventry CV4 7AL, UK
4
Present Address: School of Engineering, Cardiff University, Cardiff CF24 3AA, UK
Graphene–NWs hybrid structures have drawn enormous attention in order to exploit the exceptional qualities of the graphitic substrate as well as the intriguing properties of NWs including epitaxial growth insensitive to lattice mismatch [13] for applications in high-performance, flexible and cost-effective functional devices. InAs NWs are particularly interesting for applications in high-speed electronics and mid-infrared devices [14, 15] due to their narrow direct bandgap, small electron effective mass and high electron mobility [16, 17]. In such hybrid architectures, the two-dimensional graphene su
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