A Domain Dynamic Model Study of Magneto-impedance Sensor in the Presence of Inhomogeneous Magnetic Fields
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ORIGINAL PAPER
A Domain Dynamic Model Study of Magneto-impedance Sensor in the Presence of Inhomogeneous Magnetic Fields A. A. Rouhani 1 & L. F. Matin 1 & S. M. Mohseni 2
&
S. Zoriasatain 1
Received: 28 July 2020 / Accepted: 25 September 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract We investigate the effect of an inhomogeneous external magnetic field and magnetization on magneto-impedance (MI) effect based on the domain dynamic model. The impedance (Z) of a thin magnetic layer under different field inhomogeneity and magnetization inhomogeneity (FIH/MIH) profiles is calculated. The MI effect determined in different frequencies shows fixed MI peak location when field and magnetization are homogeneous. However, for the cases of FIH/MIH conditions, the locations of the peaks are changed for different frequencies and layer thicknesses. The MI peaks are broadened due to the FIH profile since not all domains rotate uniformly as the field changes along the length of the layer. In the case of MIH, the values of impedance are decreased more than those of FIH (maximally about 8% at peak positions), and the MI peak positions have less shifted to higher field values (maximally about 25%) in comparison with the FIH peak positions. In the case of FIH and MIH, our calculations show the maximum relative change in the impedance peak position of about 12%. The obtained results present useful information for improving the performance of future magnetic sensors which work based on the MI effect. Keywords Magneto-impedance (MI) . Magnetic sensors . Field inhomogeneity (FIH) . Magnetization inhomogeneity (MIH)
1 Introduction Magnetic sensors play a crucial role in many areas of science and technology, including space, security, non-destructive evaluation, geography, and biotechnology [1, 2]. Importantly, various sensor types will be demanded in the modern human lifestyle. Magnetic sensors operate based on different mechanisms, one of which is based on the magnetoimpedance (MI) effect. The MI effect is a significant change in the AC impedance of a ferromagnetic conductor in the presence of an external magnetic field [3]. The impedance changes against an applied magnetic field with variations reaching up to a hundred percent [4] following a field sensitivity as high as 1 2%/A/m [5]. Research on magnetic sensors based on the MI effect began in 1994 [5] which most of the mechanisms
* S. M. Mohseni [email protected] 1
Department of Physics, Islamic Azad University, North Tehran Branch, Tehran, Iran
2
Department of Physics, Shahid Beheshti University, Evin, Tehran 19839, Iran
behind the phenomena became uncovered and yet research continues on different aspects [6–10]. At the same beginning of the investigations on MI effect, a great deal of attention was focused on development of materials and structures in order to gain high ratio and sensitivity [11–20]. Most experimental studies were carried out on ribbons, wires, thin films, and composite structures due to their high transverse permeabilit
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