A FIB Micro-Sampling Technique and a Site-Specific TEM Specimen Preparation Method for Precision Materials Characterizat
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A FIB Micro-Sampling Technique and a Site-Specific TEM Specimen Preparation Method for Precision Materials Characterization Toshie Yaguchi1,2, Ryoichi Urao1, Takeo Kamino2, Tsuyoshi Ohnishi3, Takahito Hashimoto3 , Kaoru Umemura4, and Satoshi Tomimatsu4 1 School of Engineering, Ibaraki University, Hitachi, Ibaraki 316-0031, JAPAN 2 Hitachi Science Systems, Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504 JAPAN 3 Instruments Division, Hitachi Ltd., 882 Ichige, Hitachinaka, Ibaraki, 312-8504 JAPAN 4 Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo, 185-8601 JAPAN ABSTRACT A technique to cut out small pieces of samples directly from chips or wafer samples in a focused ion beam (FIB) system has been developed. A deep trench is FIB milled to cut out a small, wedge-shaped portion of the sample from the area of interest A micromanipulator with tungsten (W) probe is employed for lifting the micro-sample. The lifted micro-sample is then mounted on a carrier to prepare electron transparent thin foil specimens for transmission electron microscope (TEM) observation. We have also developed a method for site-specific TEM specimen preparation. In this method, FIB system and TEM/scanning transmission electron microscope (STEM) equipped with secondary electron (SE) detector are employed. An FIB–TEM/STEM compatible specimen holder has also been developed so that a specimen can be milled in the FIB system and observed in a TEM/STEM without remounting the specimen. STEM and scanning electron microscopy (SEM) images are used for locating a specific site on a specimen. SEM image observation at an accelerating voltage of 200kV enabled us to observe not only surface structures but also inner structures near the surface of a cross section with depth of field of around 1 micrometer. The STEM image allows the observation of inner structures of 3-5 micrometer thick specimens. Milling of a specimen by FIB and observation of the milled sample by SEM and STEM are alternately carried out until an electron transparent thin foil specimen is obtained. The position accuracy of the method in TEM specimen preparation is approximately 100nm. INTRODUCTION New materials such as electronic and semiconductor devices have been moving toward higher integration and density and their sizes are expected to continue shrinking. For characterization or failure analysis of these materials and devices, TEM with analytical D9.35.1
equipment is one of the most powerful tools. Requirements for this system are therefore rapidly increasing. For transmission electron microscopy of these materials, site-specific specimen preparation is crucial. There are many specimen preparation techniques that have been developed and that are available. Choosing the preparation method depends on the materials and the purpose of the observation required for characterization. Among the methods, FIB technique is becoming more prevalent for specimen preparation of specific areas of interest for TEM investigation of materials [1,2]. It is mainly because the FIB technique has an adva
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