A Novel Method for Rapid Formation of High-ordered Self-Assembled Monolayer
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A Novel Method for Rapid Formation of High-ordered Self-Assembled Monolayer Yoshitaka Fujita1, Norifumi Nakamoto1, Hiroyuki Takeda1, Tomoya Hidaka1, Nobuo Kimura1, Hiroshi Suzuki1, Noriyuki Yoshimoto2, Satoshi Ogawa3 1 Inorganic Materials Research Department, R. & D. Laboratory for High-Performance Materials, Nippon Soda Co.,Ltd., 12-54 Goi-Minamikaigan, Ichihara, Chiba 290-0045, Japan 2 Graduate School of Engineering, Iwate University, 3-18-8 Ueda, Morioka, Iwate 020-8550, Japan 3 Faculty of Engineering, Iwate University, 3-18-8 Ueda, Morioka, Iwate 020-8550, Japan ABSTRACT We have discovered a novel chemisorption method using octadecyltrimethoxysilane (ODMS), titanium tetraisopropoxide (TTIP), water, and toluene [1] to form highly-ordered self-assembled monolayers (SAM) of ODMS. The SAMs were formed rapidly from the active solution even when it was kept for three months. The solution and layers were characterized by several methods. We propose a mechanism for the rapid formation of the ODMS-SAM. INTRODUCTION SAMs spontaneously form molecular films on the surfaces of specific materials and they homogeneously cover a wide area [2]. The SAMs can also be easily decomposed and therefore, they have the potential to be used as resists. Their use will significantly simplify the photolithography process [3], decreasing the energy used as well as waste, and thus could be exceedingly useful for industry. Also, the SAMs do not obscure the characteristics of the substrates due to their molecular-range thickness. SAMs have been recently formed using chemical vapor deposition (CVD) [4] and chemisorption in a solution [5]. However, CVD results in weak adhesion of the molecules, and sometimes requires a high temperature under reduced pressure. Another process with thiols has the limitation that it requires rare metal substrates and a long deposition time for highly-ordered SAMs. Although using chlorosilane reagents allows for fast treatment, they are not yet preferred for the processing of electronic materials. Based on these results, we have developed and studied a fast and simple formation process for highly-ordered SAM. We report a novel chemisorption method with ODMS under normal temperature and pressure. The SAMs are formed rapidly and are homogeneous on various inorganic surfaces with a high-order.
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EXPERIMENTALS ODMS was dissolved in toluene (10 mM/kg) and the solution was saturated with water at about 500 ppm. A dry toluene solution of TTIP (1wt% as TiO2, 10 mol% based on ODMS) was added to the ODMS solution and stirred. Two hours later, the solution was saturated with water until it reached ca. 500 ppm. A washed substrate was cleaned using UV/ozone irradiation, and then immersed in the solution at room temperature. After immersion, the substrate was washed for 20 seconds in toluene with ultrasonication and dried at 60℃ for 10 minutes. The substrate thus obtained was characterized by ellipsometry, X-ray reflectivity, grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), and contact
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