A Novel Organic Complex Thin Film for Rewritable Optical Storage
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A novel organic complex thin film for rewritable optical storage S. M. Hou,a) M. Ouyang, L. Lin, and Z. Q. Xue Department of Electronics, Peking University, Beijing 100871, People’s Republic of China
W. J. Yang and H. Y. Chen College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People’s Republic of China
H. X. Zhang Beijing Laboratory of Vacuum Physics, Center of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China (Received 30 December 1997; accepted 8 September 1998)
Erasable optical storage on an organic complex thin film m-nitrobenzal malononitrile and diamine benzene (m-NBMN/DAB) has been demonstrated. High contrast pattern can be produced by 780 nm laser pulses and can be erased by heating. The static optical recording characteristics were studied by the homemade static characterizer, and the structural properties of the thin films were investigated by the high resolution scanning electron microscope (HRSEM) and transmission electron microscope (TEM).
I. INTRODUCTION
Until now, various materials (organic and inorganic) have been used for preparing thin films as optical storage media, such as CuPc film,1 (Ge–Sb–Te)–(Cr–Te) film,2 etc. Particularly, since metal-organic charge transfer complex thin films such as Ag-TCNQ, Ag-TNAP, Cu-TCNQ, and Cu-TNAP3–7 have been reported to possess optical and electro-optical switching between two states, studies of electrical and optical properties of such charge-transfer materials have been carried out extensively and deeply.8–17 Recently, a new organic material m-nitrobenzal malononitrile (m-NBMN) was synthesized, and it has been reported that the m-NBMN and diamine benzene (DAB) thin film could be used as an ultrahigh density information storage medium.18 In this paper, we will demonstrate this complex thin film as an optical storage material. The static optical recording properties of the thin film were studied. The molecular structures of m-NBMN and DAB were shown in Fig. 1.
8.4670–8.4952 (d, 1H, 2ph); 8.6775–8.6871 ppm (s, 1H, 2ph). The result of XRD shows that m-NBMN crystal belongs to the triclinic crystal system. The unit ˚ b cell dimensions are as follows: a 7.823s2d A, ± ˚ ˚ 8.730s2d A, c 7.286s1d A, a 105.90s3d , b 101.49s3d±, and g 78.75s3d±. Thin films of m-NBMN/DAB were prepared by a modified vacuum deposition method, which has been reported in our other articles in detail.11–17 The two materials were simultaneously deposited on an Al-coated glass substrate. The Al film was a reflective layer. A homemade static characterizer was used to study optical switching properties of this complex thin film. High
II. EXPERIMENTAL
m-NBMN has been characterized by elemental analysis, 1 H nuclear resonance spectroscopy (NMR), and x-ray diffraction (XRD). Analysis calculated for C10 H5 N3 O2 : C, 60.30; H, 2.51; N, 21.11; O, 16.08. Found: C, 60.18, H, 3.05; N, 21.09; O, 15.68. 1 H NMR (400 Mz, CDCl3 ): 7.9273 (s, 1H, °° CH°° C); 7.7896– 7.8
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