A preparation approach of exploring cluster ion implantation: from ultra-thin carbon film to graphene
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NANO EXPRESS
Open Access
A preparation approach of exploring cluster ion implantation: from ultra-thin carbon film to graphene Zesong Wang, Zaodi Zhang, Rui Zhang, Hui Li and Dejun Fu*
Abstract Based on the extensive application of 2 × 1.7MV Tandetron accelerator, a low-energy cluster chamber has been built to explore for synthesizing graphene. Raman spectrum and atomic force microscopy (AFM) show that an amorphous carbon film in nanometer was deposited on the silicon by C4 cluster implantation. And we replaced the substrate with Ni/SiO2/Si and measured the thickness of Ni film by Rutherford backscattering spectrometry (RBS). Combined with suitable anneal conditions, these samples implanted by various small carbon clusters were made to grow graphene. Results from Raman spectrum reveal that few-layer graphene were obtained and discuss whether IG/I2D can contribute to explain the relationship between the number of graphene layers and cluster implantation dosage. Keywords: Carbon cluster; Low-energy implantation; Graphene; Raman spectra PACS: 29.20.-c; 29.25.Ni; 81.05.-t
Background In the past of several decades, ion beam analysis (IBA) based on low-energy accelerator has developed to be a comprehensive particle analytical discipline system [1-4]. A further exploitation of what can be paid more attention has springed up on the functional materials [5], in situ observation for defects on semiconductor industry and the simulation of multi-ion irradiation environment. For instance, the energetic ion-solid interaction was taken as a classic model to characterize some structure information of superconductor at room temperature or high K by projecting MeV ions to impact on superconductive targets [6]. In order to understand the influence induced by implanting multi-energy ions to the substrate, in particular several defects that lead to some phase transitions in matter, in situ characterization of these transients which can exhibit a clear physical image on changeable process of the structure was performed by the acceleratortransmission electron microscopy (TEM) interface system [7,8]. For practical application of multi-particle irradiation, the purpose of fabricating the multi-ion irradiation stage * Correspondence: [email protected] Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
associated with simulation of the realistic environment where some special materials or functional devices are used is scientific and effective [9,10]. In a way, not only can ion beam analysis take full advantage of probing the stoichiometry but can also trace reasonable explanation on structure details of the matter [11]. In Wuhan University, the double 1.7 MV Tandetron accelerator was inherited from Physical Institution of Chinese Academy of Sciences in 2004. After several important maintenances and upgrades of facility, some primary ion beam analysis with terminal voltage at 1.2 MV can be performed in a good state, such as Ruthe
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