A State-of-the Art Review on Distributed Amplifiers
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A State‑of‑the Art Review on Distributed Amplifiers Shailesh1,2 · Garima Srivastava3 · Sachin Kumar4 Accepted: 29 October 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Distributed amplifiers (DAs) are always considered the best choice for wideband amplification as they offer appropriate gain, matching and noise figure over the large bandwidth. With the recent advancements in microwave integrated circuits, monolithic microwave integrated circuits and device processing technology, DAs have discovered new applications of the wideband amplifier. At mm-wave frequencies, the wideband amplifier is used for several applications such as radar imaging, space radiometry, optoelectronics, highfrequency transceivers, plasma diagnostics, ultra-fast measurement systems and defence systems. The main requirement of these applications is to amplify short pulses or to realize a high data rate. Studies show that DA may also be used for next-generation 100+ Gigabaud/s coherent linear fiber optic applications. This paper presents an overview of various types of DAs. In the paper, the different technologies and design methods used for designing various types of DA (from 2009 to 2019) are reported. Furthermore, a comparative analysis of the gain-bandwidth product based on different technologies is given. Keywords Distributed amplifier · Gain-bandwidth product · Microwave integrated circuits (MIC) · Monolithic microwave integrated circuits (MMIC) · Power added efficiency (PAE)
* Sachin Kumar [email protected] Shailesh [email protected] Garima Srivastava [email protected] 1
Department of Electronics and Communication Engineering, Ambedkar Institute of Advanced Communication Technologies and Research, Delhi 110031, India
2
Guru Gobind Singh Indraprastha University, Delhi 110078, India
3
Netaji Subhas University of Technology (East Campus), Delhi 110031, India
4
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea
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1 Introduction According to the Shannon–Hartley theorem, the data rate of any communication channel can be increased by increasing bandwidth of the radio channel. Therefore, most of the researchers are interested in mm-wave and ultra-wideband (UWB) electronics. As amplifier is the key component in imaging systems and transceivers, a flat and appropriate gain over a wide frequency band is required [1]. The distributed amplifiers (DAs) show a flat gain over a wide frequency band, therefore, they are used for such applications. Percival designed the first DA in the year 1939, however, it became popular after 1948. The early reported DAs were fabricated using indium phosphide (InP), gallium arsenide (GaAs), and high-speed metal–semiconductor field-effect transistor (MESFET) [2]. While the contemporary DAs are fabricated by using mixed technologies, gallium nitride (GaN), silicon–germanium bipolar complementary metal-oxide semiconductor/heterojunction bipolar transistors
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