A Study of Damage in Silicon Created By and P + Implantation
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A STUDY OF DAMAGE IN SILICON CREATED BY PI AND P+ IMPLANTATION FANG ZIWEI, LIN CHENGLU AND TSOU SHIHCHANG Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China ABSTRACT The damage and annealing behavior of Si implanted at room temperature by P2 and P1 at different energies (5-600KeV) and intermediate dose (~10 1 4 /cm 2 ) has been investigated. Experimental results show that the damage created by PJ implantation is always greater than that of P+ implantation. The ratio of total displaced atoms of the target cuased by molecular and atomic implantation, ND(mol)d/ND(atom1 reached a maximal value at 100KeV (P 2 ) and 50KeV (P+) after rapid thermal annealing, the carrier concentration profiles measured by spreading resistance measurements are also different for the P• and P+ implanted samples. We attribute essentially this phenomenon to the displacement spike, but the multiple collision effect and the interaction between two molecular fragments should be considered while the incident energy is high. INTRODUCTION Molecular ions can be used as a substitute for atomic ions in low energy ion implantation applications such as shallow junction formation for VLSI technology. The doubling of the beam energy and halving of ion fluence are, in particular, attractive features when operating at energies below the extraction voltage of the implanter. Experiments with fast molecular ion beams offer many attractive possibilities for studying atomic collisions in solids. Many experimental and theoretical studies were performed on heavy slow molecular ions and light fast molecular ions implantation[l- 4]. The former investigated the deviation of binary collisional theory due to high energy density deposited by elastic collisions in the cascade volume which results in the abnormal sputtering yields and enhancement of damage. The latter works are dealing with the interaction of molecular fragments with particular interest in the force fields (primarily the induced electric field) that surrounds ionic fragments traversing a solid. However, there is shortage of investigation in damage behavior induced by intermediate energy and mass molecular ion implantations. In this paper, we compare some of the physical and electrical properties of P1 and Pý implanted silicon using Rutherford backscattering (RBS), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and automatic spreading resistance measurements (ASR). The damage behavior of PI implanted silicon at room temperature with the incident energy Eo ranging from 5 KeV/atom to 300 KeV/atom has The molecular effects in damage creation of P4 been studied. implantation and its relationship with Eo are discussed in detail.
Mat. Res. Soc. Symp. Proc. Vol. 100.
1998 Materials Research Society
256
EXPERIMENTAL P-type Si wafers with resistivity -10T.cm, cleaned in hydrofluoric acid and rinsed in deionized water, were used as targets for ion bombardment. The P+, P+ ions were implanted at energies from 5 KeV/atom to 300 KeVYatom and d
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