A Study of the Interaction between Cu 3 Ge and (100) Si, and its Effect on Electrical Properties
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A STUDY OF THE INTERACTION BETWEEN Cu 3Ge AND (100) Si, AND ITS EFFECT ON ELECTRICAL PROPERTIES M.A. Borek, S. Oktyabrsky, M.O. Aboelfotoh and J. Narayan Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 ABSTRACT The reduction in the dimensions of advanced semiconductor devices has brought about the need for new metallization materials with low resistivity and high electromigration resistance. The Cu 3Ge, has been suggested as a contact and metallization material due to its low resistivity (6 MtQ-cm), high electromigration resistance, and high chemical, stability. We have grown thin films of Cu 3 Ge on (100) Si by the sequential e-beam deposition of an amorphous Ge layer then a Cu layer, followed by a thermal anneal to crystallize the Cu 3Ge film. The Cu-Ge films maintain their low resistivity (10-15 gtKicm) over a range of anneal temperatures, up to an anneal temperature of 600TC, where a significant increase in resistivity is observed. We have shown that this increase in resistivity is directly related to the structure of the Cu 3Ge film and interface. We have observed by cross-sectional transmission electron microscopy (TEM), that films of Cu 3Ge form a smooth, atomically sharp interface with (100) Si, up to an anneal temperature of 600'C, where the film agglomerates, and additional compounds are observed. In this paper, we discuss the correlation between microstructure, interface structure and electrical properties of these novel thin film structures. INTRODUCTION As the dimensions of semiconductor devices continue to be reduced, overall device performance and reliability will become a function of the materials which are used in metallizations. For next generation electronic devices to perform reliably, the metallization materials which are selected must have low resistivity and high electromigration resistance. Due to its low resistivity (p
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