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rformed with 2MeV 4He+ beams at the Van de Graaf accelerator (LNL Legnaro) to determine the layer thickness and to cross-check the indium compositions. The surface morphology was investigated by a scanning force Park CP microscope operated in contact-mode, using ultra-leverTm tips with nominally 10 nm tip radius. RESULTS Strain Release in InGaAs/InP Layers In the compressive case (In concentration in the interval 0.61

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