A Systematic Study of the Thermoelectric Properties of GaN-based Wide Band Gap Semiconductors
- PDF / 17,237 Bytes
- 3 Pages / 432 x 648 pts Page_size
- 20 Downloads / 236 Views
Hang, Fei, 19 Hardie, Christopher D., 1 Inanc, Ibrahim, 121 Inkson, B.J., 109 Jimenez-Palomar, Ines, 31 Khomamizadeh, Farzad, 115 Kokabi, Amir H., 115 Kotadia, Hiren R., 115 Krause, M., 103
Bahr, David F., 55, 73 Bailey, Russell J., 13, 19 Baldinozzi, Gianguido, 133 Barber, Asa H., 13, 19, 31, 43 Be´rar, Jean-Francois, 133 Bobji, M.S., 109 Britt, L.D., 25 Bushby, Andrew J., 1, 61
Lawrence, Samantha K., 73 Li, Shuangwu, 43 Lockwood, A.J., 109 Major, Ryan C., 55, 73 Mamun, M.A., 7, 25, 91 Mannan, Samjid H., 115 McCallum, Jeffrey C., 79 Miodownik, Mark, 115 Mokhtari, Omid, 115 Moody, Neville R., 55, 73
Cho, Myung Rae, 139 Cho, Sungwan, 139 Chung, Peter W., 67 Cinque, Gianfelice, 19 Clode, Michael P., 115 Cortes-Ballesteros, Beatriz, 13 Crawford, B., 25, 85
O’Bryan, G., 55 Okamoto, Yasushi, 37
Datta, Aditi, 127 Dong, Dong V., 61 Duan, Zhiyao, 127 Dunstan, David J., 61
Park, Yun Daniel, 139 Pyke, Daniel J., 79
Elliman, Robert G., 79 Elmustafa, A.A., 7, 25, 85, 91 Elsayed-Ali, H.E., 91
Qiu, A., 55 Roberts, Steve G., 1 Roshanghias, Ali, 115
Farha, A.H., 91 Feuvrier, Julien, 61 Frogley, Mark D., 19 Fujitsuka, M., 97
Schoeppner, R.L., 55 Schriever, C., 103 Shimizu, Satoshi, 49 Shim, Seung-Bo, 139 Simeone, David, 133 Skinner, J.L., 55 Stachewicz, Urszula, 19
Gerberich, William W., 55, 73 Gosset, Dominique, 133 Gupta, Himadri S., 19 145
Stauffer, Douglas D., 55, 73 Stegall, D.E., 7, 85 Sullivan, C.J., 25 Takeichi, Akihiro, 37
Wang, Congwei, 13 Wang, Guofeng, 127 Wehrspohn, R.B., 103 Wright, C.A., 25 Wu, Chi-Chin, 67
Ueno, S., 97 Ufuktepe, Y., 91
Yamaguchi, M., 97 Ye, Jiping, 49
Vance, A., 55
Zhang, Hao, 13 Zifer, T., 55
146
SUBJECT INDEX actuator, 139 adhesion, 37 alloy, 127
microelectronics, 115 microstructure, 31 nano-indentation, 1, 7, 25, 49, 55, 73, 85, 91, 97 nanoscale, 43, 109, 121 nanostructure, 103, 127, 133
biological, 25 biomaterial, 25 bone, 31 composite, 115 crystallographic structure, 91 Cu, 61
oxide, 73
dielectric, 139 dislocations, 7, 61, 67, 85
radiation effects, 1
polymer, 13, 37, 43, 49, 121
scanning probe microscopy (SPM), 13, 19, 97 Si, 79 simulation, 67, 121 soldering, 115 strength, 67 stress/strain relationship, 61, 139
elastic properties, 103, 127 electrical properties, 55 fiber, 13, 19, 43 fracture, 31 Ge, 79 grain size, 91
thin film, 55, 133 transmission electron microscopy (TEM), 1, 109 tribology, 109
H, 79 hardness, 7, 85, 97 infrared (IR) spectroscopy, 19 ion-solid interactions, 103
viscoelasticity, 49 x-ray diffraction (XRD), 133
laser, 73 laser ablation, 37
147
Data Loading...
