Physics and Properties of Narrow Gap Semiconductors
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, an
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M I C R O D E V I C E S : P H Y S I C S A N D FA B R I C AT I O N T E C H N O LO G I E S
Physics and Properties of Narrow Gap Semiconductors
Physics and Properties of Narrow Gap Semiconductors
MICRODEVICES Physics and Fabrication Technologies
Series Editors: Arden Sher, SRI International/Stanford University Marcy Berding, SRI International Recent volumes in this series:
COMPOUND AND JOSEPHSON HIGH-SPEED DEVICES Takahiko Misugi and Akihiro ELECTRON BEAM TESTING TECHNOLOGY John T.L. Thong FIELD EMISSION IN VACUUM MICROELECTRONICS George Fursey ORIENTED CRYSTALLIZATION ON AMORPHOUS SUBSTRATES E.I. Givargizov PHYSICS OF HIGH-SPEED TRANSISTORS Juras Pozela THE PHYSICS OF MICRO/NANO-FABRICATION Ivor Brodie and Julius J. Murray PHYSICS OF SUBMICRON DEVICES Ivor Brodie and Julius J. Murray THE PHYSICS OF SUBMICRON LITHOGRAPHY Kamil A. Valiev RAPID THERMAL PROCESSING OF SEMICONDUCTORS Victor E. Borisenko and Peter J. Hesketh SEMICONDUCTOR ALLOYS: PHYSICS AND MATERIAL ENGINEERING An-Ben Chen and Arden Sher SEMICONDUCTOR DEVICE PHYSICS AND SIMULATION J.S. Yuan and Peter Rossi SEMICONDUCTOR MATERIALS An Introduction to Basic Principles B.G. Yacobi PHYSICS AND PROPERTIES OF NARROW GAP SEMICONDUCTORS Junhao Chu and Arden Sher
Junhao Chu Arden Sher
Physics and Properties of Narrow Gap Semiconductors
Junhao Chu National Laboratory for Infrared Physics Shanghai Institute of Technical Physics 500 Yu Tian Road Shanghai 200083 China [email protected]
ISBN: 978-0-387-74743-9
Arden Sher SRI International (Ret.)/Stanford University Menlo Park, CA USA
e-ISBN: 978-0-387-74801-6
Library of Congress Control Number: 2007937089 ยค 2008 Springer Science+Business Media, LLC All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper. 9 8 7 6 5 4 3 2 1 springer.com
Preface
The physics of narrow-gap semiconductors is an important branch of semiconductor science. Research into this branch focuses on a specific category of semiconductor materials which have narrow forbidden band gaps. Past studies on this specific category of semiconductor materials have revealed not only general physical principles applicable to all semiconductor technology, but also those unique characteristics originating from the narrow band gaps, and therefore have significantly contributed to science and technology. Historically, developments of narrow-gap semiconduct
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