Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure
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NANO EXPRESS
Open Access
Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure Xin-Cai Yuan1, Jin-Long Tang2, Hui-Zhong Zeng3 and Xian-Hua Wei1*
Abstract This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications. Keywords: Resistive switching; Thin film; Interface; Indium tin oxide substrate
Background Binary transition metal oxides like NiO, TiO2, and ZnO have attracted much attention in the field of resistive switching due to simple constituents, low deposition temperature, and compatibility with complementary metal-oxide semiconductor technology [1,2]. Interestingly, different resistive switching behaviors have been found in metal/NiO/metal when different electrode materials were employed, such as Pt, Ag, Cu, and Al [3-6]. Lee et al. have found unipolar resistive switching (URS) in Ag(Cu)/NiO/ Pt due to the formation of an oxide layer at the metal/ NiO interface [3]. Chiang et al. have demonstrated that bipolar resistive switching (BRS) in Al/NiO/indium tin oxide (ITO) as Al/NiO interfacial reaction region combined with ITO can form a dual-oxygen reservoir structure [4]. In addition, Ni/NiO/Ni with different device structure exhibits URS and BRS modes, separately driven by electrochemical- and thermal-based mechanisms [7]. * Correspondence: [email protected] 1 State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China Full list of author information is available at the end of the article
Threshold resistive switching (TRS) and URS in NiO thin film were also found at different measuring temperatures by Chang et al. [8]. The occurrence of TRS and BRS in Mn-doped ZnO device was found with a higher CC by Yang et al. due to Joule heating [9]. More recently, the transition from URS to TRS can be tuned by the strong electron correlation through controlling the film stoichiometric ratio [10]. Moreover, the coexistence of different resistive switching behaviors has been found in many materials such as
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