Accelerated Reliability Test Inputs in Analyzing the Device Response of MgZnO Based UV Detector
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D14.5.1
Accelerated Reliability Test Inputs in Anal yzing the Device Response of MgZnO Based UV Detector S.S. Hullavarad, I.Takeuchi, J.Berger, S.Dhar, K.S. Chang, and T. Venkatesan Center for Superconductivity Research, Department .of Physics, University of Maryland, College Park, MD, 20742 T.C.Loughran Department of Electrical and Computer Engineering, University of Maryland, College Park, MD, 20742 R.D.Vispute and S.N. Yedave Blue Wave Semiconductors Inc., 6208 Three Apple Downs, Columbia, MD, 21045
Abstract In this paper we present the accelerated reliability testing of MgZnO based UV detectors. The UV detectors are fabricated on glass, quartz and sapphire substrates by Pulsed Laser Deposition (PLD) technique. The films are highly oriented and show sharp transmission at 350nm and 330nm for Mg composition of 10% and 20% in ZnO, respectively. The device response has been studied and life expectancy of the devices has been estimated from the accelerated tests. Introduction Accelerated tests are used to predict reliability when such predictions are available from no other means. Accelerated tests help us find failure modes or mechanisms that ought to be explored to see if they might occur in ordinary use. They can either be qualitative primarily to reveal probable failure modes for the product so that product engineers can improve the product design or quantitative, designed to quantify the life time of the product and produce the data obtained under accelerated conditions to extrapolate an estimated life time for the product under normal use conditions [1]. We have conducted accelerated tests in case of ZnO based UV detectors. ZnO and MgxZn1-xO have been subjects of intense scientific research as wide-band-gap optoelectronic materials. Their excellent material properties are promising for blue and UV photon emitters and detectors. They also possess unique figures of merit, such as tunable band-gap energy (3.3 to 7.8 eV) [2-5] relatively low thin-film growth temperatures (100– 750 °C) [6,7] and radiation hardness [8] which are crucial for practical optoelectronics devices. Despite the challenges of reliable p-type doping of ZnO and MgxZn1-xO that hinder the realization of p-n junction-based devices, UV photodetectors, quantum wells, and superlattices based on ZnO and MgxZn1-xO have been successfully demonstrated in recent years. If we compare quantum efficiency of Si, AlGaN and SiC materials for UV related studies, ZnO stands as a unique material with high quantum efficiency that opens the scope of this material for numerous applications. This article reports on the stability of UV detectors fabricated on MgxZn1-xO metal-semiconductor-metal (MSM) configuration performed under quantitative accelerated reliability tests. In the present study the criteria of high intense UV radiation is chosen for the analysis of stability of UV detectors.
D14.5.2
Experiment The MgxZn1-xO (x=0.1,0.2) films were grown onto glass, quartz and sapphire substrates by PLD. Details of the MgxZn1-xO PLD system and the film growth process
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