Application of gallium oxide-based UV detector in complex topography and geological exploration

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GMGDA 2019

Application of gallium oxide-based UV detector in complex topography and geological exploration Shuaijie Wang 1 & Dong Zhang 1 & Zhenhe Ju 1 Received: 15 April 2020 / Accepted: 30 July 2020 # Saudi Society for Geosciences 2020

Abstract In order to overcome the problem that the current geological exploration cannot detect complex geology effectively, a method of complex topographic geological exploration based on gallium oxide-based ultraviolet detector is proposed. On the surface of gallium oxide thin film, the dispersed aluminum nanoparticles are formed by a rapid thermal annealing method to prepare gallium oxide-based UV detector. The prepared UV detector is applied in the exploration of complex topography and geology, and the calibration conditions of geological exploration are determined. The appropriate UV detector probe is selected according to the calibration conditions. After the calibration conditions and probe are determined, the complex terrain is corrected by 3Mnnaert correction model, and the complex terrain is classified by multi-UV spectral band to realize the complex terrain geological exploration. The Maliba Reservoir in Yunnan Province with complex topography is selected as the experimental object. The experimental results show that the method can effectively explore the geological problems such as seepage, seepage stability, soil liquefaction, and uneven settlement of dam foundation in the experimental area. Keywords Gallium oxide base . UV detector . Complex topography . Geological exploration . 3Mnnaert correction model

Introduction As an important branch of photoelectric technology, ultraviolet detection technology has been widely used in military and civil fields in recent years (Shi et al. 2019), such as missile attack early warning, environmental monitoring, optical communication, and UV radiation monitoring, which has aroused the research interest of scholars. The spectrum of electromagnetic wave in the ultraviolet region is 10–400 nm, which can be divided into near ultraviolet (UV-A, 315–400 nm), medium ultraviolet (UV-B, 280–315 nm), and deep ultraviolet (UV-C, 10–280 nm). Because the ultraviolet light with wavelength less than 280 nm is strongly absorbed by the ozone layer in the atmosphere, it is difficult to reach the earth’s surface, so the ultraviolet light in this band is also called “solar-blind ultraviolet.” This article is part of the Topical Collection on Geological Modeling and Geospatial Data Analysis * Shuaijie Wang [email protected] 1

School of Renewable Energy, Shenyang Institute of Engineering, Shenyang 110136, China

Wide band gap semiconductors are used to prepare the solar-blind UV detector, which mainly include zinc magnesium oxide (ZnMgO), diamond, aluminum gallium nitrogen (AlGaN), and gallium oxide (α, β, γ, δ, ε-Ga2O3). Among these wide band gap semiconductors, β-Ga2O3 has a direct band gap width of 4.9 eV, which has high transmittance in visible, near UV and mid-UV bands (Cai et al. 2018), as well as good thermal and chemical stability, so it