Adsorption on epitaxial graphene on SiC(0001)
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Andrew Thye Shen Weeb) Department of Physics, National University of Singapore, Singapore, 117542; and Graphene Research Center, National University of Singapore, Singapore 117546 (Received 1 June 2013; accepted 8 August 2013)
Graphene, a single atomic sheet of sp2-bonded carbon atoms arranged in a honeycomb lattice, exhibits extraordinary electrical and mechanical properties, attracting much attention in both academia and industry. The preparation of high quality large-area graphene and the tuning of graphene electronic properties are important topics in this field. In this feature paper, we review our recent work on epitaxial graphene (EG) on SiC(0001). First, we introduce the bottom-up growth mechanism of the first few EG layers on SiC(0001), and the modification of graphene electronic properties by means of surface transfer doping with electron withdrawing materials (F4-TCNQ and MoO3). Next, we summarize the adsorption behaviors of organic (PTCDA, ClAlPc, and C60F48) and inorganic (bismuth) materials on EG/SiC(0001). Finally, as an example of tuning the electronic properties of graphene by reducing its dimensionality, we demonstrate the molecular self-assembly of atomically precise armchair graphene nanoribbons with varying widths and electronic structures.
I. INTRODUCTION 2
Graphene, a single atomic layer of sp -bonded carbon atoms in a honeycomb lattice, exhibits extraordinary electrical as well as mechanical properties.1–3 It has attracted much interest in both academia and industry. To realize technologically feasible graphene-based electronic, optoelectronic, chemical- and bio-sensing devices, progress is needed in the large-scale production of high quality graphene thin films and the modification of their electronic properties. Intensive research efforts have been devoted since the groundbreaking experiments regarding the twodimensional material graphene reported in 2004.4 The aim of this feature paper is to provide an overview of our work to grow high quality epitaxial graphene (EG) on SiC (0001) and to modify its electronic properties via surface adsorption.5–25 All the measurements are taken in two ultrahigh vacuum (UHV) systems with base pressures better than 2 1010 mbar: a custom-built multichamber system housing an Omicron low-temperature scanning tunneling microscopy (STM), and a multichamber endstation at the surface, interface and nanostructure science beamline, Singapore synchrotron light source.26 This article consists of seven sections: I—introduction, II—bottom-up growth of EG on SiC(0001), III—surface transfer doping of EG,
Address all correspondence to these authors. a) e-mail: [email protected] b) e-mail: [email protected] DOI: 10.1557/jmr.2013.236 J. Mater. Res., Vol. 29, No. 3, Feb 14, 2014
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IV—organic molecules on IG and EG, V—semiconducting Bi(110) nanoribbons on EG, VI—atomically precise armchair graphene nanoribbons (AGNRs), VII—summary. II. BOTTOM-UP GROWTH OF EG ON SiC(0001)
There are many approaches to fabricating single
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