ALD of Al 2 O 3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties
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ALD of Al2O3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties Nicolo’ Chiodarelli1, Annelies Delabie, Sugiura Masahito2, Yusaku Kashiwagi2, Olivier Richard, Hugo Bender, D. J. Cott, Marc Heyns3, Stefan De Gendt4, Guido Groeseneken1 and Philippe M. Vereecken5 at imec, Kapeldreef 75, Leuven, B-3001, Belgium 1 also at Department of Electrical Engineering, Katholieke Universiteit Leuven, Belgium 2 at Tokyo Electron Ltd., Technology Development Center, 650 Mitsuzawa, Hosaka-cho, Nirasaki, Yamanashi 407-0192, Japan 3 also at Metallurgy and Materials Engineering Department, Katholieke Universiteit Leuven, Belgium 4 also at Chemistry Department, Katholieke Universiteit Leuven, Leuven, B-3001, Belgium 5 also at Center for Surface Chemistry and Catalysis, Katholieke Universiteit Leuven, Belgium ABSTRACT Because of their superior electronic properties and bottom-up growth mode, Carbon Nanotubes (CNT) may offer a valid alternative for high aspect ratio vertical interconnects in future generations of microchips. For being successful, though, CNT based interconnects must reach sufficiently low values of resistance to become competitive with current W or Cu based technologies. This essentially means that CMOS compatible processes are needed to produce dense CNT shells of extremely high quality with almost ideal contacts. Moreover, their electrical properties must be preserved at every process step in the integration of CNT into vertical interconnect structures. In this work this latter aspect is analyzed by studying the changes in the electrical characteristics when encapsulating CNT into different oxides. Oxide encapsulation is often exploited to hold the CNT in place and to avoid snapping during a polishing step. On the other hand, oxide encapsulation can influence the properties of the grown CNT which are directly exposed to possibly harmful oxidative conditions. Two different deposition techniques and oxides were evaluated: Chemical Vapor Deposition (CVD) of SiO2 (reference) and Atomic Layer Deposition (ALD) of Al2O3 in less aggressive oxidizing conditions. The two processes were transferred to CNT interconnect test structures on 200mm wafers and electrically benchmarked. The CNT resistance was measured in function of the CNT length which allows the extraction and individual distinction of the resistive contributions of the CNT and the contacts. It is shown that the encapsulating SiO2 deposited by CVD degrades the resistance of CNT by altering their quality. Directions for future improvements have been identified and discussed. INTRODUCTION Carbon Nanotubes (CNT) are carbon allotropes with known outstanding electronic properties like: ballistic charge transport at room temperature up to several nanometers 0, capability of sustaining current densities larger than 109 A/cm2 without degradation [2] and high thermal conductivity [3]. For these reasons, CNT could potentially be the perfect material for manufacturing interconnects of improved performances, reliability and heat-transfer capability
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