Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates
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1150-RR03-05
Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates Alp T. Findikoglu1, Terry G. Holesinger2, Alyson C. Niemeyer3, Vladimir Matias1, and Ozan Ugurlu4 1
MPA-STC, Los Alamos National Laboratory, MS T004, Los Alamos, NM 87545, U.S.A.
2
MPA-STC, Los Alamos National Laboratory, MS K763, Los Alamos, NM 87545, U.S.A.
3
T-1, Los Alamos National Laboratory, MS B268, Los Alamos, NM 87545, U.S.A.
4
Characterization Facility, Institute of Technology, 55 Shepherd Laboratories, Minneapolis, MN 55455, U.S.A.
ABSTRACT We summarize recent progress in growth and characterization of aligned-crystalline silicon (ACSi) films on polycrystalline metal and amorphous glass substrates. The ACSi deposition process uses, as a key technique, ion-beam-assisted deposition (IBAD) texturing on a non-singlecrystalline substrate to achieve a biaxially-oriented (i.e., with preferred out-of-plane and in-plane crystallographic orientations) IBAD seed layer, upon which homo- and hetero-epitaxial buffer layers and hetero-epitaxial silicon (i.e., ACSi) films with good electronic properties can be grown. We have demonstrated the versatility of our approach by preparing ACSi films on customized architectures, including fully insulating and transparent IBAD layer and buffer layers based on oxides on glass and flexible metal tape, and conducting and reflective IBAD layer and buffer layers based on nitrides on flexible metal tape. Optimized 0.4-μm-thick ACSi films demonstrate out-of-plane and in-plane mosaic spreads of 0.8° and 1.3°, respectively, and a roomtemperature Hall mobility of ~90 cm2/V.s (~50% of what is achievable with epitaxial singlecrystalline Si films, and ~1000 times that of amorphous Si films) for a p-type doping concentration of ~4x1016 cm-3. By using various experimental techniques, we have confirmed the underlying crystalline order and the superior electrical characteristics of low-angle (
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