Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique
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MRS Advances © 2018 Materials Research Society DOI: 10.1557/adv.2018.224
Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique Shumpei Ogawa1, Tatsuya Kuroda2, Ryuga Koike2, and Hiroki Ishizaki1,2 1
Department of Electronic and Engineering, Graduate School of Engineering, Saitama Institute of Technology
2
Department of Information Systems, Faculty of Engineering, Saitama Institute of Technology
ABSTRACT
Recently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical generated by using the plasma techniques, gave the decrease of the defect into the semiconductor films. In this investigation, the relationship between microwave plasma power, nitrogen gas flow rate and concentration of generated nitrogen radical, was evaluated. At the first, Plasma emission spectrum at microwave plasma power (0 to 400W) was measured using a mixed 200sccm argon gas and 10sccm nitrogen gas. Next, the plasma emission spectrum was measured in the mixing of nitrogen gas flow rate (0 to 40sccm) with 200sccm argon gas flow rate. At that time, the microwave plasma power was set to 200W. Nitrogen radical spectrum were identified from all the emission spectrum, and the nitrogen radical intensity was calculated. As a result, the nitrogen radical intensity became the largest at 200sccm argon gas flow rate and 10sccm nitrogen gas flow rate. In addition, the nitrogen radical intensity increased in proportion to the microwave plasma power. The concentration of generated nitrogen radical could be controlled by changing the microwave plasma power and the nitrogen gas flow rate. Mentioned above, nitride thin films will be obtained on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique.
INTRODUCTION: Recently, in order to fabricate the integrated circuits, ULSI (Ultra Large Scale Integration) paid many attention. In fabricating ULSI, improvement of the operating speed and small scale for MOSFET devices is indispensable [1-4]. And the improving the electric characteristics and interface characteristics of the gate insulating film will give the operating speed and small scale for MOSFET devices. Recently, Plasma Assisted Atomic Layer Deposition Technique will easily control the thickness and the composition of semiconductor films. The radical atoms generated by using the microwave techniques, gave the decrease of the defect into the semiconductor films. For the aim of this investigation, the influence of nitrogen radical concentration with microwave plasma power and nitrogen gas flow rate was evaluated. And the Si-N
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thin films will be grown on Si Substrates by microwave generated remote plasma assisted atomic layer deposition technique. EXPRIME
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