All chemical solution deposition of epitaxial porous BiFe 0.93 Mn 0.07 O 3 thin films
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All chemical solution deposition of epitaxial porous BiFe0.93Mn0.07O3 thin films Li Zhang1,* , Bingbing Yang2, Yan Deng1, Chengbing Zhao1, Jiangying Yu1, Kai Huang1, Ping Li1, Jinrong Xu1, Min Zhang1, and Xuebin Zhu2 1 2
School of Mathematics and Physics, Anhui Jianzhu University, Hefei 230601, China Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
Received: 29 April 2020
ABSTRACT
Accepted: 19 August 2020
BiFeO3 as a type of single-phase room temperature multiferroic materials has aroused intensive investigations in recent years. Construction of porous BiFeO3 thin films is helpful for integration of other materials with desirable functionalities. Here, epitaxial BiFe0.93Mn0.07O3 (001) thin films were prepared on SrRuO3-buffered LaAlO3 (001) single crystal substrates by an all-solution chemical solution deposition, which is beneficial for large area thin film fabrication with low cost. Through addition of F-127 copolymer into the precursor solution, pores can be effectively introduced in BiFe0.93Mn0.07O3 (001) thin films while the epitaxy can be maintained. The amount of pores is gradually increased with increasing of the F-127 addition. The leakage current density is not obviously changed and the conduction mechanism can be well fitted through Ohmic behavior. Electric field dependent polarization hysteresis loops can be effectively maintained and the room temperature magnetic moment is obviously improved with the introduction of pores in epitaxial BiFe0.93Mn0.07O3 (001) thin films. The results will provide a facile route to fabricate large area epitaxial porous BiFeO3 thin films as an effective template for integration of other materials to realize desirable functionalities.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1
Introduction
Multiferroics, including two or more ferroic properties such as coexistence of ferroelectricity and ferromagnetism, have been widely investigated in recent years, which can be used to construct new devices [1–3]. BiFeO3 (BFO) as a typical single-phase room temperature multiferroic material, showing a high ferroelectric Curie temperature (1123 K) and an
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https://doi.org/10.1007/s10854-020-04296-5
antiferromagnetic Ne´el temperature of (650 K), has aroused intensive investigations in recent years [4–6]. To integrate with semiconductor industry, BFO thin films are desirable for device miniaturization. To fabricate BFO thin films, lots of deposition technique such as pulsed laser deposition [7, 8], sputtering [9, 10], metallorganic chemical vapor deposition [11], molecular beam epitaxy [12], sol–gel and chemical solution deposition (CSD), have been
J Mater Sci: Mater Electron
successfully applied to fabricate high quality BFO thin films [13]. Among these methods, CSD method is considered as an effective route to deposit large area thin films with low cost, showing the advantages such as mixing of precursors at atomic scale, pr
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