Epitaxial Growth of ZnO Thin Films on SiC Prepared by Chemical Solution Deposition
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Epitaxial Growth of ZnO Thin Films on SiC Prepared by Chemical Solution Deposition Young-Sik Park1, Young-Sun Jeon1, Kyung-Ok Jeon1, Bo-An Kang2, Kyu-Seog Hwang2, JuHyun Jeong3, and Young-Hwan Lee4 1 Camera Module Team, Korea Photonics Technology Institute, Gwangju, 500-460, Korea, Republic of 2 Department of Applied Optics, Nambu University, 864-1 Wolgye-dong Gwangsan-gu, Gwangju, 506-824, Korea, Republic of 3 Department of Ophthalmic Optics, Konyang University, Daejeon, 302-718, Korea, Republic of 4 Department of Automobile, Chunnam Techno College, Chonnam, 516-911, Korea, Republic of
ABSTRACT Zinc oxide thin films have emerged as one of the most promising oxide materials owing to their optical and electrical properties, together with their high chemical and mechanical stability. Chemical solution deposition is an attractive technique for obtaining ZnO thin films and has the advantages of easy control of the film composition and easy fabrication of a larger area thin film at low cost. In this work, epitaxial ZnO thin films on 6H-SiC(0001) substrates were prepared by using a chemical solution deposition with a zinc naphthenate precursor. Asdeposited films were pyrolyzed at 500°C for 10 min in air and finally annealed at 600°C, 700°C, 800°C, and 900°C for 30 min in air. The in-plane alignment of the films was investigated by Xray pole-figure analysis. A field emission-scanning electron microscope, a scanning probe microscope, and a He-Cd laser (325nm) were used to analyze the surface morphology, the surface roughness and photoluminescence of the films.
INTRODUCTION Zinc oxide (ZnO) based coatings are of much interest in science and technology due to their interesting potential applications [1-3]. Many techniques have been employed to produce epitaxial and textured ZnO based coatings, i.e., pulsed laser deposition [4], RF magnetron sputtering [5], chemical vapor deposition [6], and molecular beam epitaxy [7]. Among the various techniques, chemical solution deposition (CSD) has proved to be a simple and inexpensive method [8, 9]. To meet the industrial needs for the commercially available ZnO devices, the easier and cheaper deposition methods for the ZnO film should be developed. However, as far as we know, very few works have been reported on the fabrication of the epitaxial ZnO thin films by the CSD process with a zinc naphthenate precursor, although there have been several papers on the textured ZnO with a zinc acetate-2methoxyethanol- 2aminoethanol sol [10]. In our previous work [11], highly textured ZnO films along the c-axis on amorphous silica substrates by spin-coating a precursor naphthenate sol was obtained. In this work, 6HSiC(0001) was adopted as substrates to prepare epitaxial ZnO thin films by CSD. The lattice
constants of 6H-SiC along the a- and c-axes are 3.08 and 15.117Å, respectively. Considering the ZnO lattice constant, the lattice mismatch (fm) for the ZnO/6H-SiC heterostructure has been estimated to be ~ 5%. Since the structural and optical properties are vital for semiconductor
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