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AN APPROACH TO HIGH QUALITY a-Ge:H BY VHF DEPOSITION RALF ZEDLITZ, MORITZ HEINTZE, GOTTFRIED H. BAUER

Institut fur Physikalische Elektronik, Universitit Stuttgart,Pfaffenwaldring 47, D-7000 Stuttgart 80, F.R.Germany Abstract

Amorphous hydrogenated germanium a-Ge:H was deposited by very high frequency glow discharge (VHF-GD) at frequencies between 25 and 220MHz, low pressure (2.5Pa) and high deposition rates (_

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