Analysis of optical and magnetooptical spectra of Fe 5 Si 3 and Fe 3 Si magnetic silicides using spectral magnetoellipso
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ONIC PROPERTIES OF SOLID
Analysis of Optical and Magnetooptical Spectra of Fe5Si3 and Fe3Si Magnetic Silicides Using Spectral Magnetoellipsometry S. A. Lyashchenkoa,b, Z. I. Popova,b, S. N. Varnakova,b, E. A. Popova, M. S. Molokeevb,f, I. A. Yakovleva,b, A. A. Kuzubovb,c, S. G. Ovchinnikova,b,c, T. S. Shamirzaevd, A. V. Latyshevd, and A. A. Saranine a
Reshetnikov Siberian State Aerospace University, Krasnoyarsk, 660014 Russia Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia c Siberian Federal University, Krasnoyarsk, 660041 Russia d Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia e Institute for Automation and Control Processes, Far East Branch, Russian Academy of Sciences, Vladivostok, 690041 Russia f Far Eastern State Transport University, Khabarovsk, 680021 Russia email: [email protected] b
Received October 27, 2014
Abstract—The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250– 1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spinpolarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals. DOI: 10.1134/S1063776115050155
1. INTRODUCTION It is well known that ferromagnet/semiconductor multilayer structures can be used for designing a spin transistor in which the value of the spin current can be varied by controlling the magnetization states of ferro magnetic layers, thus producing a current valve. The usually high spin injection factor in such devices is manifested when a sharp interface separates the ferro magnet from the semiconductor [1], which is techno logically difficult to obtain. The traditional solution to the problem of creating a sharp interface is the epitax ial growth of thin ferromagnetic films on the semicon ductor. In spintronics devices, silicon is successfully used as the semiconducting layer in view of its weak spin–orbit interaction, long relaxation period, and the leading role of silicon technologies in contemporary microelectronics [2]. For the ferromagnetic layer, 3d metals (in particular, iron) are traditionally used [3]. A large number of publications are devoted to investigat ing the transport, structural, and magnetic properties of Fe/Si systems, including ferromagnetic silicides Fe5Si3 and Fe3Si in iron. Silicide Fe3Si is characterized by a large electron spin polarization factor [4, 5] and can be grown epi taxially on a Si(111) single crystal [6, 7]. In turn, the Fe5Si3 silic
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