Spin Accumulation in the Fe 3 Si/ n -Si Epitaxial Structure and Related Electric Bias Effect
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ccumulation in the Fe3Si/n-Si Epitaxial Structure and Related Electric Bias Effect A. S. Tarasova,b*, A. V. Luk’yanenkoa,b, I. A. Bondareva,b, I. A. Yakovleva, S. N. Varnakova, S. G. Ovchinnikov a,b, and N. V. Volkova,b a
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia b Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041 Russia *e-mail: [email protected] Received November 8, 2019; revised February 19, 2020; accepted April 6, 2020
Abstract—The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures. Keywords: iron silicide, ferromagnet/semiconductor structures, Hanle effect, spin accumulation, electric spin injection. DOI: 10.1134/S1063785020070135
The spin-dependent transport and magnetotransport in various nanostructures have been studied for several decades. The explosive development of this area started with the discovery of the giant magnetoresistance effect [1]. The design of a spin transistor proposed in [2] stimulated the creation of various spin devices [3]. In contrast to traditional electronics, which operates with the electron charge, spintronics uses the spin and spin current [4]. Silicon spintronics, which deals with the spin phenomena in silicon-based structures and devices, seems most promising. It offers the possibility of creating new spin-based devices using the highly developed silicon technology. Moreover, in the near future, this will allow the development of the hybrid devices that combine elements of both classical electronics and spintronics, as has already happened with magnetoresistive random access memory [5]. Silicon, along with good manufacturability, exhibits a weak spin–orbit coupling, which is necessary to implement spin transport at large distances. Therefore, silicon may become a basis for new-generation electronics, the main element of which is a spin-controlled field-effect transistor (SpinFET). The operation of a SpinFET and some other spin devices requires spin accumulation in nonmagnetic silicon, which needs to be somehow detected. The simplest and most electronics-friendly way to do this is by using electrical spin injection and detection [6]. To detect the spin accumulation effect, i.e., the nonequilibrium spin polarization induced by electrical injection, so-called “nonlocal spin transport
measurements” (4T) [7] or the three-terminal Hanle method (3T) [8] are used. These approaches are widely used to study the features of spin transport in silicon structures, seek the most efficient injector materials, and improve the theory of spin diffusion [9, 10]. The search for optimal layer materials and compositi
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