Analysis of Polarization Characteristics Change of the Si-doped HfO 2 with Temperature Using Impedance Spectroscopy
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Analysis of Polarization Characteristics Change of the Si-doped HfO2 with Temperature Using Impedance Spectroscopy Moonyoung Jung∗ Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea and Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea
Dante Ahn∗ and Seung-Eon Ahn
†
Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea (Received 21 September 2020; revised 14 October 2020; accepted 14 October 2020) In order to improve the performance of memory semiconductors, devices are miniaturized and the degree of integration is increasing. In response to this, fields such as FTJ, Fe-FET, and FeRAM using ferroelectrics are attracting attention. Among them, the hafnia-based ferroelectric has emerged as the core material of the next generation semiconductor memory using ferroelectric due to its advantages such as thickness and CMOS process compatibility. In order for the hafnia material to be mass-produced and commercialized in the industry, electrical properties must be evaluated in various environments. In order to contribute to this, this study observes the temperature-dependent change of hafnia based capacitor, and reports its mechanism. Keywords: Ferroelectric, HfO2 , Impedance Spectroscopy DOI: 10.3938/jkps.77.784
I. INTRODUCTION Since the first discovery of ferroelectricity by J. Valasek in Rochelle Salt in 1921 [1], Pb(Zr,Ti)O3 , SrBi2 Ta2 O9 and BaTiO3 ferroelectrics with perovskite structures were studied extensively [2–5]. Ferroelectrics are high-k materials and have been in the spotlight in various semiconductor memory fields due to their ferroelectric properties. Ferroelectric is a high-k material and, due to its ferroelectric properties, have been in the spotlight in various semiconductor memory fields. The main fields of research using ferroelectric are FeRAM (Ferroelectric Random Access Memory) [6], FTJ (Ferroelectric Tunnel Junction) [7], and Fe-FET (Ferroelectric Field Effect Transistor) [8–10]. The next generation of memory semiconductor research fields using such perovskitestructured ferroelectric has been studying for a long time since its concept was introduced, but stuck in the problem that the ferroelectric properties disappeared when the thickness became thinner. In 2011, TS B¨oscke [11] reported that ferroelectric properties exist in Si-doped HfO2 with a thickness of 10 nm. As a result, HfO2 material has begun to attract attention as a key to addressing the downscale issue of perovskite ferroelectrics. In ∗ These
addition, HfO2 materials are already widely used in the semiconductor industry, high-K materials, and excellent compatibility with CMOS processes, thus emerging as a promising material for next-generation memory semiconductors. However, given that HfO2 has not yet secured its reliability enough to be actively used in the actual industry, it is time to study the effects of various external conditions, such as electrical stress, temperature, and humidity and so on [12–15]. In this study,
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