Analysis on data storage area of NiO-ReRAM with secondary electron image
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T. Makino, T. Yoda, and K. Dobashi Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan
S. Kishida Department of Information and Electronics, Graduate School of Engineering, Tottori University, Tottori 680-8552, Japan; and Tottori University Electronic Display Research Center, Tottori 680-0941, Japan (Received 24 June 2010; accepted 24 September 2010)
Both low and high resistance states (which were written by voltage application in a local region of NiO/Pt films using conducting atomic force microscopy [C-AFM]) were observed with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using a complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed using energy-dispersive x-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination that affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the secondary electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film. I. INTRODUCTION
In recent years advances have been made in the research and development of resistive random-access memory (ReRAM) that uses voltage-induced resistive change in transition metal oxides (TMOs) as memory media. ReRAM is a candidate for a substitution for Flash memory, which is facing a microfabrication limit in the near future. Furthermore, a development of a nonvolatile and high-density universal memory with fast switching and high switching endurance is expected in the future. However, the optimization of the performance and the establishment of reliability have been prevented by the fact that the switching mechanism of ReRAM has not yet been clarified. Therefore, the elucidation of the switching mechanism is urgently required. ReRAM has a simple structure of a top electrode (TE)/ TMO/a bottom electrode (BE). Memory effect develops after a forming process, and it becomes possible to cause a set, which is a resistive switching from a high resistance state (HRS) to a low resistance state (LRS), and a reset, which is a resistive switching from the LRS to the HRS, a)
Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2010.57 J. Mater. Res., Vol. 26, No. 1, Jan 14, 2011
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alternately. Here, the forming is a phenomenon, which is similar to a soft breakdown, and a conductive path called a filament is formed after it. Resistive switching is thought to take place in the filament.1–4 The reason why the elucidation of
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