• PDF / 1,722,414 Bytes
• 6 Pages / 417.6 x 639 pts Page_size
• 22 Downloads / 223 Views

DOWNLOAD

REPORT

pascal.sallagoity~st.com

ABSTRACT The scalabilty of the titanium self-aligned silicide (Salicide) process is one of the main issues for sub-quarter micron technologies. The major difficulty is to achieve a low sheet resistance for very narrow polysilicon lines and highly doped S/D regions, without degrading the transistor performance. A preamorphization implant (PAl) performed before the titanium deposition, can achieve a low Ti silicide sheet resistance (

Recommend Documents

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

153 43 478KB

Formation of TiSi 2 on nitrogen ion implanted (001)Si

192 95 437KB

Formation and Properties of TiSi 2 as Contact Material for High-Temperature Thermoelectric Generators

182 78 245KB

Effects of a Ta Interlayer on the Titanium Silicide Reaction: C40 Formation and Higher Scalability of the TiSi 2 Process

156 51 660KB

Formation of a ternary silicide for Ni/Ti/Si (100) and Ni/TiSi 2 structures

218 92 951KB

Facilitated C54-TiSi 2 Formation With Elevated Deposition Temperature: A Study of CO-Deposited Layers

163 71 1MB

Lowering the formation temperature of the C54-TiSi 2 phase using a metallic interfacial layer

119 15 126KB

A comparison of C54-TiSi 2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rap

138 33 571KB

Down Milling Trimming Process Optimization for Carbon Fiber-Reinforced Plastic

186 24 4MB

Phase Transformation Kinetics of TiSi 2

219 59 706KB

Phase Transition and Formation of TiSi 2 Codeposited on Atomically Clean Si(111)

195 49 913KB

Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

177 99 757KB