Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxid
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esearch Letter
Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide Keita Nomoto, School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia Sebastian Gutsch, IMTEK, Albert-Ludwigs-University Freiburg, 79110 Freiburg, Germany Anna V. Ceguerra, and Andrew Breen, Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006, Australia Hiroshi Sugimoto, and Minoru Fujii, Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan Ivan Perez-Wurfl, School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia Simon P. Ringer, Australian Institute for Nanoscale Science and Technology, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006, Australia Gavin Conibeer, School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia Address all correspondence to Keita Nomoto, Gavin Conibeer at [email protected]; [email protected] (Received 30 May 2016; accepted 26 August 2016)
Abstract We analyze phosphorus (P)- and boron (B)-doped silicon nanocrystals (Si NCs) with various compositions of silicon-rich oxide using atom probe tomography. By creating Si iso-concentration surfaces, it is confirmed that there are two types of Si NC networks depending on the amount of excess Si. A proximity histogram shows that P prefers to locate inside the Si NCs, whereas B is more likely to reside outside the Si NCs. We discuss the difference in a preferential location between P and B by a segregation coefficient.
Introduction Silicon nanocrystals (Si NCs) are interesting for photovoltaic and biologic applications[1,2] due to their unique quantum confinement effect properties.[3] All-Si tandem solar cells using Si NCs potentially have higher energy conversion efficiency than a single junction Si solar cell and also can be fabricated using conventional thin film techniques. Colloidal Si NCs have attracted great interest for live-cells bio-imaging due to its nontoxicity as a material. For practical applications, impurity doping is important to control electronic properties; however, doping of Si NCs is challenging because the dopant atoms are thought to be ejected during thermal treatments because of the mechanism of self-purification.[4] Although there have been intensive studies on optical and electrical properties of doped Si NCs,[5–7] the structure and distribution of Si NCs will be different between samples because of variation in the fabrication methods. This includes features such as excess Si content, doping levels, presence of nitrogen, and annealing conditions. How these different microstructural features influence the displayed functional properties is still not fully understood. So to elucidate this, it is im
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