Atomic Scale Control of Si(001) Surface by Wet-Chemical Treatment

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ATOMIC SCALE CONTROL OF Si(001) SURFACE BY WET-CHEMICAL TREATMENT YUKINORI MORITA AND HIROSHI TOKUMOTO Joint Research Center for Atom Technology (JRCAT) National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan. ABSTRACT STM observation of the wet-chemical treated Si(001) surface was carried out. On the surface treated by 1%-HF solution (pH=2), the STM images were always rough and hardly exhibited the atomic feature. The STM images on the surface treated by HCl:HF=19:1 solution (pH

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