Bi-doped barium ferrite decorated polythiophene nanocomposite: influence of Bi-doping on structure, morphology, thermal
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Bi-doped barium ferrite decorated polythiophene nanocomposite: influence of Bi-doping on structure, morphology, thermal and EMI shielding behavior for Xband Sajid Iqbal1,2, Halima Khatoon1, R. K. Kotnala3, and Sharif Ahmad1,* 1
Materials Research Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi 110025, India Department of Chemistry, Kalindi College, University of Delhi, New Delhi 110008, India 3 CSIR-National Physical Laboratory, New Delhi 110012, India 2
Received: 30 March 2020
ABSTRACT
Accepted: 18 August 2020
The electronic and communication devices such as mobile, laptop, and radio ease our day-to-day life. However, these devices emit harmful radiation, which affects human health and the environment. Therefore, to prevent such radiationbased pollution and provide a safer working environment, viable and promising EMI shielding materials have been investigated. Keeping this in mind, the present work reports the relatively low-temperature synthesis of bismuth-doped barium ferrite (BaBixFe12-xO19, Bi-BFO) nanoparticles and their nanocomposite via sol–gel and in situ emulsion polymerization approaches for their application in EMI shielding material. The influence of Bi-doping on phase purity, morphology, structure, and thermal behavior has been explored. The EMI shielding properties of these materials have been investigated in the X-band (8.2–12.4 GHz) region. The composite (Bi-BFO:PT = 2:1 Bi-BFO/PTh-21) with 1 mm thickness exhibited maximum shielding effectiveness (SE) of - 47.12 dB in the X-band region. The high shielding activity is mainly due to the efficient complementarities between the magnetic and dielectric loss. The doping of Bi in barium ferrite results in the increase in electrical polarization that led to the high dielectric loss, causing higher absorption of electromagnetic (EM) waves. These studies suggest that the nanocomposite may find its scope as an excellent microwave absorber for a wide frequency region.
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Springer Science+Business
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Handling Editor: Kevin Jones.
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https://doi.org/10.1007/s10853-020-05134-z
J Mater Sci
GRAPHIC ABSTRACT
Introduction The electromagnetic interference (EMI) pollution has arisen due to the excessive and continuous use of electronic devices. This pollution has led to an increase in severe health problems and the failure of instruments [1–3]. To diminish such effect, a variety of electromagnetic (EM) wave absorbing materials have been developed till date [4]. Among these materials, hexagonal barium ferrite (BaFe12O19, BFO) is considered to be an outstanding EMI absorbing material owing to its excellent magnetic properties with high coercivity, magnetic resonance frequency, and large magnetocrystalline anisotropy [5, 6]. Nevertheless, pure BFO suffers with a high magnetic resonance frequency and poor current microwave absorption performance. These are the setbacks to meet the demands for the applications in the region of gigahertz (GHz)
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