Influence of synthesis, dopants, and structure on electrical properties of bismuth ferrite ( $$\hbox {BiFeO}_{3}$$
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REVIEW
Influence of synthesis, dopants, and structure on electrical properties of bismuth ferrite ( BiFeO3) Soumya G. Nair1 · Jyotirmayee Satapathy1 · N. Pavan Kumar2 Received: 3 July 2020 / Accepted: 25 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Bismuth ferrites (BFO) nanomaterials are one of the promising materials to provide applications in the electrical world for its unique multiferroic properties. The evolution in its research from the pure crystals to doped and co-doped forms has shown mankind the diversity of its properties and subsequent useful applications. The peculiarities of ferroelectric and ferromagnetic properties, as observed in these multiferroics, are the result of the structural perturbations which is due to the nature of the doping element and different synthesis mechanisms. The enhanced magnetoelectric coefficient, high dielectric constant, and improved ferroelectricity of doped BFO open the use in non-volatile memory devices. A consolidation of the noteworthy changes reported in the structural and electrical properties of BFO bulk ceramics, popular category of multiferroics so far is reviewed here in brief. This review mainly focuses on modifications seen in ferroelectric properties with respect to doping at Bismuth site, Iron site, and both or co-doping. As the modifications are mostly due to structural changes, structural and morphological changes occurring due to doping are also covered briefly. Keywords Bismuth ferrites · Multiferroic · Structural characteristics · Dielectric properties · Ferroelectricity
1 Introduction Materials that exhibit more than two ferroic properties (ferroelectricity, ferromagnetism, ferroelasticity, etc.) belong to the category of Multiferroics. Multiferroics are important, because of their magnetoelectric (ME) effect i.e. both ferroelectric polarization and magnetization can be controlled by both magnetic and electric fields [1]. The Magnetoelectric effect is applicable in spintronics and spin valves with electric field tunable devices, or non-volatile multi-storage devices like FeRAMs and MRAMs, ferroelectric and magnetic random access memories [2]. Among these, BiFeO3 (BFO) is an important multiferroic material as it exhibits * Soumya G. Nair [email protected] Jyotirmayee Satapathy [email protected] N. Pavan Kumar [email protected] 1
Department of Physics, Amrita Vishwa Vidyapeetham, Amritapuri, India
Matrusri Engineering College, Saidabad, Hyderabad 500059, India
2
G-type antiferromagnetism and ferroelectricity simultaneously at room temperature. In BFO ( ABO3 ), A-sites are usually occupied by Bi3+ ions which favor the stability of ferro-electrically distorted structures and Fe-sites are occupied by transition metal ions contributing to magnetism [3]. In general, ferroelectricity in BFO results due to the vacant d0 orbital, whereas ferromagnetism—due to the partially filled dn orbitals. However, ferroelectricity can also be produced by stereochemical activity of Bi3+ ions while Fe3
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