Boron doping of ultrananocrystalline diamond films by thermal diffusion process
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esearch Letter
Boron doping of ultrananocrystalline diamond films by thermal diffusion process Pablo Tirado, Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA Jesus J. Alcantar-Peña, Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA Elida de Obaldia, Facultad de Ciencia y Tecnología, Universidad Tecnológica de Panamá, Panamá, República de Panamá; Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA Yuriy Kudriavtsev, Departamento de Ingeniería Eléctrica, CINVESTAV-IPN, Ciudad de México, México Rafael García, Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora 83000, México Orlando Auciello, Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA; Department of Bioengineering, University of Texas at Dallas, Richardson, TX 75080, USA Address all correspondence to Orlando Auciello at [email protected] (Received 30 May 2018; accepted 27 July 2018)
Abstract A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm−3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10−14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.
Introduction The fundamental materials science, chemistry, physics, and biologic properties of Ultrananocrystalline Diamond (UNCD) films are being investigated, due to potential new applications in industrial[1,2] and high-tech products[3] and UNCD-coated industrial[4] and high-tech[5] products already in the market. The technological applications of UNCD coatings are based on their unique combination of properties such as high wear resistance,[1,4] highest hardness relative to any other films,[1,4] lowest friction coefficient compared with metal and ceramic coatings,[1,4] resistance to chemical corrosion in corrosive industrial fluids[1,5] and body fluids,[6] negative electron affinity, low work function for electron emission[1,7] high electrical conductivity for N-UNCD films with nitrogen atoms incorporated in grain boundaries[1,8] high electrical conductivity for Boron-doped UNCD films, produced by inserting Boron atoms during film growth.[5] Alternatively, nitrogen and Boron atoms incorporated in other nanocrystalline diamond films also exhibited high electrical conductivity.[9–11] The electrical conductivity prope
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