Broad range adjustable emission of stacked SiN x /SiO y layers
- PDF / 331,361 Bytes
- 4 Pages / 585 x 783 pts Page_size
- 23 Downloads / 178 Views
Broad range adjustable emission of stacked SiNx/SiOy layers J. Barretoa) Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
M. Perálvarez Enginyería i Materials Electrónics (EME), IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
A. Morales Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain
B. Garrido Enginyería i Materials Electrónics (EME), IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
J. Montserrat and C. Domínguez Instituto de Microelectrónica de Barcelona, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas (IMB-CNM, CSIC), Bellaterra 08193, Barcelona, Spain (Received 18 October 2007; accepted 29 February 2008)
Structures containing stacked layers of silicon-rich silicon nitride (green-blue luminescence) and oxide (red luminescence) fabricated by ion implantation are reported, and it is shown how a Si-based material can be engineered to emit over a broad range. To study in depth the emission from implanted SiNx matrices, single nitride layers have been also fabricated by the first time. Si excess variation and the relative thickness of nitride and oxide provide the intensity and position variation of the peaks, and thus open the way to engineer a stack with desired emission properties over the whole visible spectrum.
Silicon nanostructures have garnered much effort from the scientific community as candidates for providing an optically active material for the microelectronic community.1–4 Since discovering the intense emission from porous silicon,5 a wide variety of nanostructured siliconbased materials have been developed. Among them, silicon oxides with embedded silicon nanocrystals (Si-NCs) have been the most frequently reported on because of their strong emission, optical gain, optical nonlinear properties, high thermal and chemical stability, and full compatibility with Si microelectronics. Silicon nitride (Si3N4) is a very promising alternative to silicon oxide. It presents similar optical and structural properties and a lower energy barrier.4,6–9 The light emission from nanostructured SiNx is comparable to that from silicon-rich
a)
Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/JMR.2008.0189 J. Mater. Res., Vol. 23, No. 6, Jun 2008
http://journals.cambridge.org
Downloaded: 22 Mar 2015
silicon oxides and is appreciably blue-shifted (the position of the emission peak is located at ∼500 nm for nitrides and ∼800 nm for oxides). It is generally accepted that the emission from Si-NC-based structures is modulated by the size of the Si-NCs7 and is strongly affected by the surrounding matrix.10–12 With an accurate control of the fabrication parameters, the size and posi
Data Loading...
